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Domain dynamics in Stoichiometric Lithium Tantalate revealed by etching and on-line Second Harmonic Generation
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Laserfysik.ORCID-id: 0000-0001-7306-0272
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Laserfysik.
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Laserfysik.ORCID-id: 0000-0003-2070-9167
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Laserfysik.ORCID-id: 0000-0001-7688-1367
2015 (engelsk)Konferansepaper, Oral presentation with published abstract (Fagfellevurdert)
Abstract [en]

Periodically poled LiTaO3 has a shorter cut-off wavelength than KTP and LiNbO3, which makes this material attractive for UV generation. However, the standard congruent material suffers strongly from photorefractive damage which has limited its use in the UV. It is expected that stoichiometric LiTaO3 (SLT) would make a superior material in this context, as the defect concentration, which directly relates to the damage, is strongly reduced. Close to perfectly stoichiometric crystals can be obtained by post growth diffusion of Li2O into the crystal at high temperatures to compensate the Li2O deficiency, so called vapour transport equilibrated (VTE) SLT [1]. The coercive field is drastically reduced for SLT which facilitates the way for fabricating QPM devices [2]. However lower defects and reduced coercive field might cause instability for charged domain walls (DW) or walls that are not in their lowest energy state. Since the stability mechanism for VTE SLT is not very well known, its investigation would lead to improvement in device fabrication with short period and also helps to understand the DW dynamics.

 

In this work, we study the impact of chemical etching after poling on domain stability of SLT. We show that chemical etching right after poling induced DW movement without any external field. We demonstrate that when the original DW configuration is head-to-head (HH) or tail-to-tail (TT), the DW movement results in backswitching or merging with neighboring domians, respectively. Our finding are monitored by in situ SHG during etching followed by characterization of the domain structure with optical microscopy. We also show that this behavior is independent of the domain orientation with respect the crystallographic axes.

sted, utgiver, år, opplag, sider
Simon Fraser University , 2015.
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-198496OAI: oai:DiVA.org:kth-198496DiVA, id: diva2:1057085
Konferanse
13th International Symposium on Ferroic Domains & Micro- to Nano-scopic Structures (ISFD-13)
Merknad

QC 20170109

Tilgjengelig fra: 2016-12-16 Laget: 2016-12-16 Sist oppdatert: 2019-04-12bibliografisk kontrollert

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