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Ion implantation technology for silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
2016 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 306, p. 190-193Article in journal (Refereed) Published
Abstract [en]

Ion implantation is a key process technique for semiconductor materials, in particular silicon, for local tailoring of the semiconductor properties. The wide bandgap semiconductor silicon carbide (SiC) features outstanding material properties for high power and high temperature electronic devices, but the properties of SiC also make it difficult to manufacture and process the material. The development of implantation technology for SiC has therefore necessitated several changes, from mainstream silicon implantation technology. This paper will discuss the difficulties with implantation of SiC for manufacturing of electronic devices and also describe how the problems have been overcome, for instance by implantation at elevated temperatures and using high temperature post-implant annealing. (C) 2016 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 306, p. 190-193
Keywords [en]
SiC, Doping, Implantation damage, Diffusion, Activation, Annealing
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-197767DOI: 10.1016/j.surfcoat.2016.05.075ISI: 000387526200037Scopus ID: 2-s2.0-84971621270OAI: oai:DiVA.org:kth-197767DiVA, id: diva2:1060701
Conference
19th International Conference on Surface Modification of Materials by Ion Beams (SMMIB), NOV 22-27, 2015, Chiang Mai, THAILAND
Note

QC 20161229

Available from: 2016-12-29 Created: 2016-12-08 Last updated: 2017-11-29Bibliographically approved

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Hallén, AndersLinnarsson, Margareta K.

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