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Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules
ABB Corporate Research.ORCID-id: 0000-0001-9790-5524
ABB Corporate Research.
2016 (engelsk)Inngår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 31, nr 6, s. 4517-4525Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A simple analytical Spice-type model has been developed and verified for the first time for 4H-SiC-based bipolar junction transistor (BJT) power module with voltage and current rating of 1200 V and 800 A. The simulation model is based on a temperature-dependent silicon carbide (SiC) Gummel-Poon model for high-power applications. PSpice simulations are performed to extract technology-dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. Influence of various circuit elements, for instance, stray inductance and base resistance and internal device modeling parameters, carrier life time, and emitter doping, on switching losses has been studied. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.

sted, utgiver, år, opplag, sider
IEEE Press, 2016. Vol. 31, nr 6, s. 4517-4525
Emneord [en]
Device modeling; device simulation; 4H-SiC; 4H-SiC BJT; PSpice; silicon carbide
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-203954DOI: 10.1109/TPEL.2015.2477477ISI: 000368453300049Scopus ID: 2-s2.0-84962428098OAI: oai:DiVA.org:kth-203954DiVA, id: diva2:1083245
Merknad

QC 20170410

Tilgjengelig fra: 2017-03-20 Laget: 2017-03-20 Sist oppdatert: 2017-11-29bibliografisk kontrollert

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Johannesson, Daniel
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