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Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
2017 (Engelska)Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 122, nr 2, artikel-id 025701Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The carbon vacancy (V-C) is a prominent defect in as-grown 4H-SiC epitaxial layers for high power bipolar devices. V-C is electrically active with several deep levels in the bandgap, and it is an efficient "killer" of the minority carrier lifetime in n-type layers, limiting device performance. In this study, we provide new insight into the equilibration kinetics of the thermodynamic processes governing the V-C concentration and how these processes can be tailored. A slow cooling rate after heat treatment at similar to 2000 degrees C, typically employed to activate dopants in 4H-SiC, is shown to yield a strong reduction of the V-C concentration relative to that for a fast rate. Further, post-growth heat treatment of epitaxial layers has been conducted over a wide temperature range (800-1600 degrees C) under C-rich surface conditions. It is found that the thermodynamic equilibration of V-C at 1500 degrees C requires a duration less than 1 h resulting in a V-C concentration of only similar to 10(11) cm(-3), which is, indeed, beneficial for high voltage devices. In order to elucidate the physical processes controlling the equilibration of V-C, a defect kinetics model is put forward. The model assumes Frenkel pair generation, injection of carbon interstitials (C-i's) from the C-rich surface (followed by recombination with V-C's), and diffusion of V-C's towards the surface as the major processes during the equilibration, and it exhibits good quantitative agreement with experiment.

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American Institute of Physics (AIP), 2017. Vol. 122, nr 2, artikel-id 025701
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URN: urn:nbn:se:kth:diva-211608DOI: 10.1063/1.4991815ISI: 000405663800057Scopus ID: 2-s2.0-85024404894OAI: oai:DiVA.org:kth-211608DiVA, id: diva2:1130938
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QC 20170811

Tillgänglig från: 2017-08-11 Skapad: 2017-08-11 Senast uppdaterad: 2017-08-11Bibliografiskt granskad

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