Åpne denne publikasjonen i ny fane eller vindu >>2017 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]
Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved.
In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus.
sted, utgiver, år, opplag, sider
Stockholm, Sweden: KTH Royal Institute of Technology, 2017. s. 128
Serie
TRITA-ICT ; 17
Emneord
Silicon carbide (SiC), bipolar junction transistor (BJT), integrated circuit (IC), sigma-delta (Σ∆), data conversion, operational amplifier(OpAmp), VBIC, SPICE Gummel-poon, high-temperature, electromechanical, accelerometer, capacitive sensor
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-213969 (URN)978-91-7729-498-6 (ISBN)
Disputas
2017-10-06, Ka-Sal A (Sal Östen Mäkitalo) KTH, Kistagången 16, Kista, 10:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Swedish Foundation for Strategic Research , HOTSiCKnut and Alice Wallenberg Foundation, Working on Venus
Merknad
QC 20170911
2017-09-112017-09-072022-06-27bibliografisk kontrollert