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SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0003-1230-7133
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0001-9519-9902
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0001-8108-2631
2017 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, nr 9, s. 3588-3594Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The first vertical bipolar intercompany (VBIC)-based compact dc model has been developed and verified for a low-voltage 4H-SiC bipolar junction transistor to continuously map a wide temperature range from 300 to 773 K. Temperature and doping dependent physical models for bandgap, incomplete ionization, carrier mobility, and lifetime have been taken into account to give physically meaningful fitting parameters for the compact model. Isothermal simulations using the default VBIC model are performed to extract key parameter sets from measured data at seven different temperature points. Then new temperature dependent equations for the key parameters are proposed and embedded in the default VBIC model. Consequently, a single set of model parameters at 300 K is used to achieve fitting over a wide temperature range from 300 to 773 K. This new model can be used for simulating circuits that require continuous description of device dc performance over a wide temperature range.

sted, utgiver, år, opplag, sider
IEEE, 2017. Vol. 64, nr 9, s. 3588-3594
Emneord [en]
Integrated circuit modeling, Ionization, Mathematical model, Semiconductor process modeling, Temperature dependence, Temperature distribution, Temperature measurement, 4H-silicon carbide (SiC), Verilog-A, bipolar junction transistor (BJT), circuit simulation, continuous temperature, device compact model, temperature dependence, vertical bipolar intercompany (VBIC) model
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
URN: urn:nbn:se:kth:diva-213693DOI: 10.1109/TED.2017.2730200ISI: 000408118700009Scopus ID: 2-s2.0-85028762472OAI: oai:DiVA.org:kth-213693DiVA, id: diva2:1138299
Prosjekter
HOTSiC
Forskningsfinansiär
Swedish Foundation for Strategic Research
Merknad

QC 20170906

Tilgjengelig fra: 2017-09-04 Laget: 2017-09-04 Sist oppdatert: 2023-12-05bibliografisk kontrollert
Inngår i avhandling
1. SiC Readout IC for High Temperature Seismic Sensor System
Åpne denne publikasjonen i ny fane eller vindu >>SiC Readout IC for High Temperature Seismic Sensor System
2017 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved.

In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus.

sted, utgiver, år, opplag, sider
Stockholm, Sweden: KTH Royal Institute of Technology, 2017. s. 128
Serie
TRITA-ICT ; 17
Emneord
Silicon carbide (SiC), bipolar junction transistor (BJT), integrated circuit (IC), sigma-delta (Σ∆), data conversion, operational amplifier(OpAmp), VBIC, SPICE Gummel-poon, high-temperature, electromechanical, accelerometer, capacitive sensor
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-213969 (URN)978-91-7729-498-6 (ISBN)
Disputas
2017-10-06, Ka-Sal A (Sal Östen Mäkitalo) KTH, Kistagången 16, Kista, 10:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Swedish Foundation for Strategic Research , HOTSiCKnut and Alice Wallenberg Foundation, Working on Venus
Merknad

QC 20170911

Tilgjengelig fra: 2017-09-11 Laget: 2017-09-07 Sist oppdatert: 2022-06-27bibliografisk kontrollert

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Tian, YeHedayati, RahelehZetterling, Carl-Mikael

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