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High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology
KTH, Skolan för informations- och kommunikationsteknik (ICT). KTH University. (EKT)
KTH, Skolan för informations- och kommunikationsteknik (ICT).
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT).
Visa övriga samt affilieringar
2017 (Engelska)Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 897, s. 681-684Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

This paper demonstrates a fully integrated master-slave emitter-coupled logic (ECL)comparator and a frequency divider implemented in 4H-SiC bipolar technology. The comparator consists of two latch stages, two level shifters and an output buffer stage. The circuits have been tested up to 500 °C. The single ended output swing of the comparator is -7.73 V at 25 °C and-7.63 V at 500 °C with a -15 V supply voltage. The comparator consumes 585 mW at 25 °C. The frequency divider consisting of two latches shows a relatively constant output voltage swing over the wide temperature range. The output voltage swing is 7.62 V at 25 °C and 7.32 V at 500 °C.

Ort, förlag, år, upplaga, sidor
Switzerland: Trans Tech Publications Inc., 2017. Vol. 897, s. 681-684
Nyckelord [en]
Silicon carbide (SiC), bipolar junction transistor (BJT), high temperature integrated circuit (IC), master-slave latched comparator, frequency divider, bipolar comparators
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:kth:diva-213696DOI: 10.4028/www.scientific.net/MSF.897.681Scopus ID: 2-s2.0-85020019892OAI: oai:DiVA.org:kth-213696DiVA, id: diva2:1138344
Konferens
European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki Greece
Forskningsfinansiär
Stiftelsen för strategisk forskning (SSF)
Anmärkning

QC 20170905

Tillgänglig från: 2017-09-05 Skapad: 2017-09-05 Senast uppdaterad: 2017-09-05Bibliografiskt granskad
Ingår i avhandling
1. High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
Öppna denna publikation i ny flik eller fönster >>High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
2017 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. In fact, Si-based ICs have a limited maximum operating temperature which is around 300 °C for silicon on insulator (SOI). Owing to its superior material properties such as wide bandgap, three times larger than Silicon, and low intrinsic carrier concentration, SiC is an excellent candidate for high-temperature applications. In this thesis, analog and mixed-signal circuits have been implemented using SiC bipolar technology, including bandgap references, amplifiers, a master-slave comparator, an 8-bit R-2R ladder-based digital-to-analog converter (DAC), a 4-bit flash analog-to-digital converter (ADC), and a 10-bit successive-approximation-register (SAR) ADC. Spice models were developed at binned temperature points from room temperature to 500 °C, to simulate and predict the circuits’ behavior with temperature variation. The high-temperature performance of the fabricated chips has been investigated and verified over a wide temperature range from 25 °C to 500 °C. A stable gain of 39 dB was measured in the temperature range from 25 °C up to 500 °C for the inverting operational amplifier with ideal closed-loop gain of 40 dB. Although the circuit design in an immature SiC bipolar technology is challenging due to the low current gain of the transistors and lack of complete AC models, various circuit techniques have been applied to mitigate these problems. This thesis details the challenges faced and methods employed for device modeling, integrated circuit design, layout implementation and finally performance verification using on-wafer characterization of the fabricated SiC ICs over a wide temperature range.

Ort, förlag, år, upplaga, sidor
KTH Royal Institute of Technology, 2017. s. 107
Serie
TRITA-ICT ; 2017:16
Nyckelord
silicon carbide (SiC), bipolar junction transistor (BJT), high temperature, SiC integrated circuit, Spice Gummel-Poon (SGP), operational amplifier (opamp), negative feedback amplifier, bandgap reference, masterslave comparator, digital-to-analog converter (DAC), analog-to-digital converter (ADC), flash ADC, successive approximation register (SAR) ADC
Nationell ämneskategori
Elektroteknik och elektronik
Forskningsämne
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-213697 (URN)978-91-7729-496-2 (ISBN)
Disputation
2017-09-29, Ka-Sal A (Sal Östen Mäkitalo), Kistagången 16, Kista, Stockholm, 13:00 (Engelska)
Opponent
Handledare
Forskningsfinansiär
Stiftelsen för strategisk forskning (SSF)
Anmärkning

QC 20170905

Tillgänglig från: 2017-09-05 Skapad: 2017-09-05 Senast uppdaterad: 2017-09-18Bibliografiskt granskad

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Av författaren/redaktören
Hedayati, RahelehLanni, LuigiaShakir, MuhammadSalemi, ArashZetterling, Carl-Mikael
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Skolan för informations- och kommunikationsteknik (ICT)Integrerade komponenter och kretsar
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