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Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors-Part II: Analysis of Device Properties
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6459-749X
Vise andre og tillknytning
2017 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, nr 9, s. 3927-3933Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In Part I, we have established a wafer-scale, CMOS compatible graphene transfer for the back end of the line integration. In Part II of this paper, we analyze statistical data of device properties and draw conclusions about possible causes of device failure. Statistical analysis is performed for device mobility and compared with the yield analysis. To complement this analysis, detailed Raman spectra are employed to analyze strain. In addition, device models developed in Part I are examined and provide further insight. From the analysis, it appears that compressive strain introduced during the graphene transfer process is may be the primary source for device failure. Moreover, we speculate based on the device statistics that the mitigation of compressive strain will improve device mobility, carrier density, and reduce variability. In addition, the presence of residues, tears, and cracks in the graphene may result in some device failure.

sted, utgiver, år, opplag, sider
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2017. Vol. 64, nr 9, s. 3927-3933
Emneord [en]
Graphene, graphene FET (GFET), RF, statistics, wafer-scale fabrication
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Identifikatorer
URN: urn:nbn:se:kth:diva-214310DOI: 10.1109/TED.2017.2727823ISI: 000408118700060OAI: oai:DiVA.org:kth-214310DiVA, id: diva2:1141995
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QC 20170918

Tilgjengelig fra: 2017-09-18 Laget: 2017-09-18 Sist oppdatert: 2017-09-18bibliografisk kontrollert

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Malm, B. Gunnar

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Smith, Anderson D.Malm, B. GunnarÖstling, Mikael
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