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Wafer-Scale Statistical Analysis of Graphene FETs-Part I: Wafer-Scale Fabrication and Yield Analysis
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6459-749X
Vise andre og tillknytning
2017 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, nr 9, s. 3919-3926Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Wafer-scale, CMOS compatible graphene transfer has been established for device fabrication and can be integrated into a conventional CMOS process flow back end of the line. In Part I of this paper, statistical analysis of graphene FET (GFET) devices fabricated on wafer scale is presented. Device yield is approximately 75% (for 4500 devices) measured in terms of the quality of the top gate, oxide layer, and graphene channel. Statistical evaluation of the device yield reveals that device failure occurs primarily during the graphene transfer step. In Part II of this paper, device statistics are further examined to reveal the primary mechanism behind device failure. The analysis from Part II suggests that significant improvements to device yield, variability, and performance can be achieved through mitigation of compressive strain introduced in the graphene layer during the graphene transfer process. The combined analyses from Parts I and II present an overview of mechanisms influencing GFET behavior as well as device yield. These mechanisms include residues on the graphene surface, tears, cracks, contact resistance at the graphene/metal interface, gate leakage as well as the effects of postprocessing.

sted, utgiver, år, opplag, sider
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2017. Vol. 64, nr 9, s. 3919-3926
Emneord [en]
Graphene, graphene FET ( GFET), RF, statistics, wafer-scale fabrication
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-214309DOI: 10.1109/TED.2017.2727820ISI: 000408118700059OAI: oai:DiVA.org:kth-214309DiVA, id: diva2:1141998
Merknad

QC 20170918

Tilgjengelig fra: 2017-09-18 Laget: 2017-09-18 Sist oppdatert: 2017-09-18bibliografisk kontrollert

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