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Investigation of intersubband absorption of GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.
Vise andre og tillknytning
2007 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 301, nr SPEC. ISS., s. 301-302Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Ten period GaN/AlN multiple quantum well (MQW) structures were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates and metal-organic vapour-phase epitaxy (MOVPE)-grown GaN templates. Samples were investigated by high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared (FT-IR) spectroscopy. Intersubband (IS) absorbances and FWHM of IS absorption peaks indicated that samples grown on the GaN templates had better characteristics, resulting in a FWHM as low as 93 meV at a peak energy of 700 meV.

sted, utgiver, år, opplag, sider
2007. Vol. 301, nr SPEC. ISS., s. 301-302
Emneord [en]
high-resolution X-ray diffraction, molecular beam epitaxy, quantum wells, nitrides
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-6661DOI: 10.1016/j.jcrysgro.2006.11.258ISI: 000246015800105Scopus ID: 2-s2.0-33947321547OAI: oai:DiVA.org:kth-6661DiVA, id: diva2:11433
Merknad
QC 20100903Tilgjengelig fra: 2006-12-15 Laget: 2006-12-15 Sist oppdatert: 2017-12-14bibliografisk kontrollert
Inngår i avhandling
1. Photonic Devices and Applications based on Intersubband Transitions and Electromagnetically Induced Transparency
Åpne denne publikasjonen i ny fane eller vindu >>Photonic Devices and Applications based on Intersubband Transitions and Electromagnetically Induced Transparency
2006 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Although photonic devices have experienced a rapid development lately, there is still room for substantial improvements in performance. From a telecommunications perspective, improvements in speed, size, integration and power consumption are desired. There is also a general interest in photonic devices with new functionalities. Being a key component in fiber-optic systems, high-speed optical modulators often initiate the development towards higher bit-rates. The technology of current state-of-the-art modulators has matured suggesting new paths of development. In this thesis we investigate the potential of modulators based on intersubband (IS) transitions in quantum wells (QWs). Specific QW designs are suggested and complete modulator structures are simulated. IS absorption is also experimentally characterized. Absorption linewidth is critical for IS modulator performance since narrow linewidth implies high bandwidth and/or small driving voltage. High material quality is important, since linewidth is typically limited by well-width fluctuations and interface roughness.

A mid-IR AlGaAs/GaAs-modulator is proposed having a RC-limited bandwidth of 130 GHz and a peak-to-peak voltage of 0.9 V. Experimentally, Stark shift is measured in InAlAs/InAlGaAs/InGaAs step QWs at λ ~ 6 μm predicting that an IS modulator based on this material would have a bandwidth of 90 GHz and a peak-to-peak voltage of 0.9 V. IS absorption at 1.55 μm requires material combinations with high conduction-band offset. Simulations of an InGaAs/InAlAs/AlAsSb-modulator predict a bandwidth of 90 GHz and a peak-to-peak voltage of 2.0 V. Experimental studies of IS absorption in AlN/GaN QWs are presented. IS absorption at 1.5-3.4 μm with linewidth below 100 meV is measured for well widths between 15-54 Å. Subpeaks corresponding to well-width fluctuations on the monolayer scale are identified with linewidths of ~60 meV. Agreement between theoretical calculations and measured spectra is encouraging. Theoretical simulations together with measured absorption linewidths suggest that high performance IS modulators operating at 1.55 μm are realizable.

Photonic devices with new functionalities are addressed by investigating electromagnetically induced transparency (EIT) theoretically and considering potential applications based on EIT. Simulations of two-dimensional pulse-propagation based on the Maxwell-Bloch equations are performed with a focus on storing and reading out optical pulses. We explicitly formulate the phase-matching conditions for reading out stored pulses in a new direction and propose a serial-to-parallel converter based on this.

For slow-light devices, e.g. optical buffers, we identify and analyze two main limitations on the medium bandwidth; the frequency dependent absorption and the group velocity dispersion. Since large bandwidth and large delay are contradictory requirements, the delay bandwidth product is considered. Analytical expressions are derived and analyzed and verified by simulations on pulse propagation. Insertion of parameters relevant for semiconductors indicates that development of materials with long coherence times are necessary for realizing optical buffers based on EIT.

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2006. s. xiii, 55
Serie
Trita-ICT/MAP ; 2006:5
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4246 (URN)978-91-7178-525-1 (ISBN)
Disputas
2007-01-17, Sal F3, KTH, Lindstedtsvägen 26, Stockholm, 10:00
Opponent
Veileder
Merknad
QC 20100903Tilgjengelig fra: 2006-12-15 Laget: 2006-12-15 Sist oppdatert: 2010-09-03bibliografisk kontrollert
2. Gallium nitride templates and its related materials for electronic and photonic devices
Åpne denne publikasjonen i ny fane eller vindu >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

 

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. xiv, 89
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Emneord
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Disputas
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Veileder
Merknad
QC 20100623Tilgjengelig fra: 2008-05-16 Laget: 2008-05-16 Sist oppdatert: 2010-09-20bibliografisk kontrollert

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