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Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar. Ascatron AB, Sweden.
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2017 (Engelska)Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications Inc., 2017, Vol. 897, s. 455-458Konferensbidrag (Refereegranskat)
Abstract [en]

1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 250ºC is analyzed and measured on wafer level. The forward voltage drop of 1.1 V at 100 A/cm2 and 3.8 V at 1000 A/cm2 is measured, respectively. At reverse voltage of 1 kV, a leakage current density below 0.1 μA/cm2 and below 0.1 mA/cm2 is measured at 25 and 250ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.

Ort, förlag, år, upplaga, sidor
Trans Tech Publications Inc., 2017. Vol. 897, s. 455-458
Serie
Materials Science Forum, ISSN 0255-5476 ; 897
Nyckelord [en]
Buried grid, High temperature, High voltage, Junction barrier Schottky (JBS), Silicon carbide (SiC)
Nationell ämneskategori
Annan elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-216328DOI: 10.4028/www.scientific.net/MSF.897.455Scopus ID: 2-s2.0-85020051562ISBN: 9783035710434 (tryckt)OAI: oai:DiVA.org:kth-216328DiVA, id: diva2:1151298
Konferens
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 25 September 2016 through 29 September 2016
Anmärkning

QC 20171023

Tillgänglig från: 2017-10-23 Skapad: 2017-10-23 Senast uppdaterad: 2017-10-23Bibliografiskt granskad

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Elahipanah, HosseinÖstling, Mikael
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