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Formation of D-Center in p-type 4H-SiC epi-layers during high temperature treatments
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektronik, Integrerade komponenter och kretsar.
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2017 (Engelska)Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications Inc., 2017, Vol. 897, s. 262-265Konferensbidrag (Refereegranskat)
Abstract [en]

The current work is devoted to studying the evolution of deep level defects in the lower half of the 4H-SiC bandgap after high temperature processing and ion implantation. Two as-grown and pre-oxidized 4H-SiC sets of samples have been thermally treated at temperatures up to 1950 °C for 10 min duration using RF inductive heating. Another set of as grown samples was implanted by 4.2 MeV Si ions at room temperature (RT) with different doses (1- 4×108 cm-2). The so-called “D-center” at EV+0.6 eV dominates and forms after the elevated heat treatments, while it shows no change after the ion implantations (EV denotes the valence band edge). In contrast, the concentration of the so-called HK4 level at EV+1.44 eV increases with the implantation dose, whereas it anneals out after heat treatment at ≥ 1700 °C.

Ort, förlag, år, upplaga, sidor
Trans Tech Publications Inc., 2017. Vol. 897, s. 262-265
Serie
Materials Science Forum, ISSN 0255-5476 ; 897
Nyckelord [en]
D-center, DLTS, Formation energy, High-Temperature processing, Ion Implantation
Nationell ämneskategori
Annan materialteknik
Identifikatorer
URN: urn:nbn:se:kth:diva-216741DOI: 10.4028/www.scientific.net/MSF.897.262Scopus ID: 2-s2.0-85020003071ISBN: 9783035710434 (tryckt)OAI: oai:DiVA.org:kth-216741DiVA, id: diva2:1152712
Konferens
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 25 September 2016 through 29 September 2016
Anmärkning

QC 20171026

Tillgänglig från: 2017-10-26 Skapad: 2017-10-26 Senast uppdaterad: 2017-10-26Bibliografiskt granskad

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Hallén, Anders
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