Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Assessment of 10 kV, 100 A Silicon Carbide MOSFET Power Modules
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elkraftteknik. ABB Corp Res Ctr, S-72178 Vasteras, Sweden..ORCID-id: 0000-0001-9790-5524
ABB Corp Res Ctr, S-72178 Vasteras, Sweden..
ABB Corp Res Ctr, S-72178 Vasteras, Sweden..
2018 (engelsk)Inngår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 33, nr 6, s. 5215-5225Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This paper presents a thorough characterization of 10 kV SiC MOSFET power modules, equipped with third-generation MOSFET chips and without external free-wheeling diodes, using the inherent SiC MOSFET body-diode instead. The static performance (e.g., IDS-VDS, IDS-VGS, C-V characteristics, leakage current, body-diode characteristics) is addressed by measurements at various temperatures. Moreover, the power module is tested in a simple chopper circuit with inductive load to assess the dynamic characteristics up to 7 kV and 120 A. The SiC MOSFET power module exhibits an on-state resistance of 40 m Omega at room-temperature and leakage current in the range of 100 nA, approximately one order of magnitude lower than that of a 6.5 kV Si-IGBT. The power module shows fast switching characteristics with the turn-on (turn-on loss) and turn-off (turn-off loss) times of 130 ns (89 mJ) and 145 ns (33 mJ), respectively, at 6.0 kV supply voltage and 100 A current. Furthermore, a peak short-circuit current of 900 A and a short-circuit survivability time of 3.5 mu s were observed. The extracted characterization results could serve as input for power electronic converter design and may support topology evaluation with realistic system performance predictability, using SiC MOSFET power modules in the energy transmission and distribution networks.

sted, utgiver, år, opplag, sider
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 33, nr 6, s. 5215-5225
Emneord [en]
Device characterization, power modules, short-circuit robustness, SiC mosfets, wide bandgap devices
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-225280DOI: 10.1109/TPEL.2017.2728723ISI: 000426014100055Scopus ID: 2-s2.0-85028878329OAI: oai:DiVA.org:kth-225280DiVA, id: diva2:1195787
Merknad

QC 20180406

Tilgjengelig fra: 2018-04-06 Laget: 2018-04-06 Sist oppdatert: 2018-04-06bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Johannesson, Daniel

Søk i DiVA

Av forfatter/redaktør
Johannesson, Daniel
Av organisasjonen
I samme tidsskrift
IEEE transactions on power electronics

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 285 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf