Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
An Intermediate Frequency Amplifier for High-Temperature Applications
KTH, Skolan för elektroteknik och datavetenskap (EECS).ORCID-id: 0000-0003-2540-8726
KTH.
KTH.
Vise andre og tillknytning
2018 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 65, nr 4, s. 1411-1418Artikkel i tidsskrift (Fagfellevurdert) Accepted
Abstract [en]

This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which decreases gradually to 16 dB at 251 °C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 65, nr 4, s. 1411-1418
Emneord [en]
4H-silicon carbide (4H-SiC) bipolar junction transistors (BJTs), high temperature, intermediate frequency (IF) amplifiers, matching networks
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-227642DOI: 10.1109/TED.2018.2804392ISI: 000427856300022Scopus ID: 2-s2.0-85042860667OAI: oai:DiVA.org:kth-227642DiVA, id: diva2:1204867
Forskningsfinansiär
Knut and Alice Wallenberg Foundation
Merknad

QC 20180509

Tilgjengelig fra: 2018-05-09 Laget: 2018-05-09 Sist oppdatert: 2019-04-24bibliografisk kontrollert
Inngår i avhandling
1. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
Åpne denne publikasjonen i ny fane eller vindu >>High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
2019 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. In particular, analog, digital and mixed-signal integrated circuits, based on in-house SiC bipolar technology, have been shown to operate successfully for temperatures as high as 500 oC. This thesis aims at exploring the potential of in-house SiC bipolar technology for realizing high-temperature radio frequency (RF) circuits.

To that end, the in-house SiC bipolar junction transistors (BJTs) are first characterized up to 300 oC for RF figures of merit like unity current gain bandwidth and unity power gain bandwidth. The measurement results showed the feasibility of the current batch of SiC BJTs for developing RF circuits operating at low-end of very high frequency (VHF) band. Thereafter, three fundamental blocks of a high-temperature radio receiver, i.e. an intermediate-frequency amplifier, an oscillator and a down-conversion mixer were implemented. Firstly, an intermediate-frequency amplifier has been designed and measurement results demonstrated operation up to 251 oC. The proposed amplifier achieved a gain, input, and output matching of 16 dB, -7.5 dB and -11.2 dB, respectively, at 54.6 MHz and 251 oC. Next, 500 oC operation of an active down-conversion mixer has been exhibited. Measurements have shown that the conversion gain of the proposed mixer is 4.7 dB at 500 oC. Lastly, a negative resistance oscillator has been designed and tested successfully up to 400 oC. It has been shown that at 400 oC, the proposed oscillator delivers an output power of 8.4 dBm into a 50 Ω load.

In addition to SiC BJTs, the aforementioned circuits also employed spiral inductors implemented on PCBs, commercially available ceramic capacitors and thick-film resistors. Therefore, this thesis presents the evaluation of passives to assess their feasibility for high temperature operation. This work also identifies and addresses several challenges associated with the development flow of high-temperature RF circuits.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2019. s. viii-xix, 82
Serie
TRITA-EECS-AVL ; 2019:40
Emneord
4H-SiC, active down-conversion mixer, BJT, EM simulations, silicon carbide, high-temperature, IF amplifier, LTCC, negative resistance oscillator, passives, RF circuits
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-249972 (URN)978-91-7873-170-1 (ISBN)
Disputas
2019-05-29, Sal-C, Forum, Isafjordgatan 39, Kista, Stockholm, 13:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Knut and Alice Wallenberg Foundation, 66167
Merknad

QC 20190425

Tilgjengelig fra: 2019-04-25 Laget: 2019-04-24 Sist oppdatert: 2019-04-26bibliografisk kontrollert

Open Access i DiVA

fulltext(2274 kB)82 nedlastinger
Filinformasjon
Fil FULLTEXT01.pdfFilstørrelse 2274 kBChecksum SHA-512
837f4e5b95a1092ef720eb2f4a49b57ba82b5674c0997b37367f7fecbf39fed0084902fb192ac4c9a2b718fb5fbcc27930c089b0b60b559a81d265e1469165f6
Type fulltextMimetype application/pdf

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Elahipanah, HosseinSchröder, StephanRodriguez, SaulMalm, B. GunnarRusu, Ana

Søk i DiVA

Av forfatter/redaktør
Hussain, Muhammad WaqarElahipanah, HosseinSchröder, StephanRodriguez, SaulMalm, B. GunnarÖstling, MikaelRusu, Ana
Av organisasjonen
I samme tidsskrift
IEEE Transactions on Electron Devices

Søk utenfor DiVA

GoogleGoogle Scholar
Totalt: 82 nedlastinger
Antall nedlastinger er summen av alle nedlastinger av alle fulltekster. Det kan for eksempel være tidligere versjoner som er ikke lenger tilgjengelige

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 342 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf