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An Intermediate Frequency Amplifier for High-Temperature Applications
KTH, School of Electrical Engineering and Computer Science (EECS).ORCID iD: 0000-0003-2540-8726
KTH.
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2018 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 65, no 4, p. 1411-1418Article in journal (Refereed) Accepted
Abstract [en]

This paper presents a two-stage small signal intermediate frequency amplifier for high-temperature communication systems. The proposed amplifier is implemented using in-house silicon carbide bipolar technology. Measurements show that the proposed amplifier can operate from room temperature up to 251 °C. At a center frequency of 54.6 MHz, the amplifier has a gain of 22 dB at room temperature, which decreases gradually to 16 dB at 251 °C. Throughout the measured temperature range, it achieves an input and output return loss of less than-7 and-11 dB, respectively. The amplifier has a 1-dB output compression point of about 1.4 dBm, which remains fairly constant with temperature. Each amplifier stage is biased with a collector current of 10 mA and a base-collector voltage of 3 V. Under the aforementioned biasing, the maximum power dissipation of the amplifier is 221 mW.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 65, no 4, p. 1411-1418
Keywords [en]
4H-silicon carbide (4H-SiC) bipolar junction transistors (BJTs), high temperature, intermediate frequency (IF) amplifiers, matching networks
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-227642DOI: 10.1109/TED.2018.2804392ISI: 000427856300022Scopus ID: 2-s2.0-85042860667OAI: oai:DiVA.org:kth-227642DiVA, id: diva2:1204867
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20180509

Available from: 2018-05-09 Created: 2018-05-09 Last updated: 2019-04-24Bibliographically approved
In thesis
1. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
Open this publication in new window or tab >>High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
2019 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. In particular, analog, digital and mixed-signal integrated circuits, based on in-house SiC bipolar technology, have been shown to operate successfully for temperatures as high as 500 oC. This thesis aims at exploring the potential of in-house SiC bipolar technology for realizing high-temperature radio frequency (RF) circuits.

To that end, the in-house SiC bipolar junction transistors (BJTs) are first characterized up to 300 oC for RF figures of merit like unity current gain bandwidth and unity power gain bandwidth. The measurement results showed the feasibility of the current batch of SiC BJTs for developing RF circuits operating at low-end of very high frequency (VHF) band. Thereafter, three fundamental blocks of a high-temperature radio receiver, i.e. an intermediate-frequency amplifier, an oscillator and a down-conversion mixer were implemented. Firstly, an intermediate-frequency amplifier has been designed and measurement results demonstrated operation up to 251 oC. The proposed amplifier achieved a gain, input, and output matching of 16 dB, -7.5 dB and -11.2 dB, respectively, at 54.6 MHz and 251 oC. Next, 500 oC operation of an active down-conversion mixer has been exhibited. Measurements have shown that the conversion gain of the proposed mixer is 4.7 dB at 500 oC. Lastly, a negative resistance oscillator has been designed and tested successfully up to 400 oC. It has been shown that at 400 oC, the proposed oscillator delivers an output power of 8.4 dBm into a 50 Ω load.

In addition to SiC BJTs, the aforementioned circuits also employed spiral inductors implemented on PCBs, commercially available ceramic capacitors and thick-film resistors. Therefore, this thesis presents the evaluation of passives to assess their feasibility for high temperature operation. This work also identifies and addresses several challenges associated with the development flow of high-temperature RF circuits.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2019. p. viii-xix, 82
Series
TRITA-EECS-AVL ; 2019:40
Keywords
4H-SiC, active down-conversion mixer, BJT, EM simulations, silicon carbide, high-temperature, IF amplifier, LTCC, negative resistance oscillator, passives, RF circuits
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-249972 (URN)978-91-7873-170-1 (ISBN)
Public defence
2019-05-29, Sal-C, Forum, Isafjordgatan 39, Kista, Stockholm, 13:00 (English)
Opponent
Supervisors
Funder
Knut and Alice Wallenberg Foundation, 66167
Note

QC 20190425

Available from: 2019-04-25 Created: 2019-04-24 Last updated: 2019-04-26Bibliographically approved

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