Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Reaction control of metal-assisted chemical etching for silicon-based zone plate nanostructures
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.ORCID-id: 0000-0001-7569-9408
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
Vise andre og tillknytning
2018 (engelsk)Inngår i: RSC Advances, ISSN 2046-2069, E-ISSN 2046-2069, Vol. 8, nr 23, s. 12628-12634Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Metal-assisted chemical etching (MACE) reaction parameters were investigated for the fabrication of specially designed silicon-based X-ray zone plate nanostructures using a gold catalyst pattern and etching solutions composed of HF and H2O2. Etching depth, zone verticality and zone roughness were studied as a function of etching solution composition, temperature and processing time. Homogeneous, vertical etching with increasing depth is observed at increasing H2O2 concentrations and elevated processing temperatures, implying a balance in the hole injection and silica dissolution kinetics at the gold-silicon interface. The etching depth decreases and zone roughness increases at the highest investigated H2O2 concentration and temperature. Possible reasons for these observations are discussed based on reaction chemistry and zone plate design. Optimum MACE conditions are found at HFH2O2 concentrations of 4.7 M:0.68 M and room temperature with an etching rate of ≈0.7 μm min-1, which is about an order of magnitude higher than previous reports. Moreover, our results show that a grid catalyst design is important for successful fabrication of vertical high aspect ratio silicon nanostructures. 

sted, utgiver, år, opplag, sider
Royal Society of Chemistry, 2018. Vol. 8, nr 23, s. 12628-12634
Emneord [en]
Aspect ratio, Charge injection, Hydrofluoric acid, Nanocatalysts, Nanostructures, Plate metal, Processing, Silica, Silicon, X ray diffraction, Etching solutions, Metal-assisted chemical etching, Processing temperature, Reaction chemistry, Reaction parameters, Silica dissolution, Silicon interface, Silicon nano structures, Etching
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-227483DOI: 10.1039/c8ra01627eScopus ID: 2-s2.0-85045188242OAI: oai:DiVA.org:kth-227483DiVA, id: diva2:1206195
Forskningsfinansiär
Swedish Research Council
Merknad

Export Date: 9 May 2018; Article; CODEN: RSCAC; Correspondence Address: Vogt, U.; KTH Royal Institute of Technology, Department of Applied Physics, Biomedical and X-ray Physics, Albanova University CenterSweden; email: uvogt@kth.se; Funding details: VR, Vetenskapsrådet; Funding text: This work was supported by the Swedish Research Council. We thank Adem B. Ergul for help with the cross-section images and Jussi Rahomäki for starting with MACE in our group. QC 20180516

Tilgjengelig fra: 2018-05-16 Laget: 2018-05-16 Sist oppdatert: 2019-10-18bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Akan, RabiaParfeniukas, KarolisVogt, CarmenVogt, Ulrich

Søk i DiVA

Av forfatter/redaktør
Akan, RabiaParfeniukas, KarolisVogt, CarmenToprak, M. S.Vogt, Ulrich
Av organisasjonen
I samme tidsskrift
RSC Advances

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 383 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf