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Modeling charge transport in photon-counting detectors
US FDA, Div Radiol Hlth, Off In Vitro Diagnost & Radiol Hlth, Ctr Devices & Radiol Hlth, 10903 New Hampshire Ave, Silver Spring, MD 20993 USA..
KTH, School of Engineering Sciences (SCI), Physics, Physics of Medical Imaging.
Stanford Univ, Dept Bioengn, Stanford, CA 94305 USA.;Stanford Univ, Dept Radiol, Stanford, CA 94305 USA..
Stanford Univ, Dept Bioengn, Stanford, CA 94305 USA.;Stanford Univ, Dept Radiol, Stanford, CA 94305 USA.;Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA..
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2018 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 899, p. 115-121Article in journal (Refereed) Published
Abstract [en]

The purpose of this study is to review and compare simulation methods for describing the transport of charge clouds in silicon based semiconductor detectors and investigate the effects on energy spectrum for silicon based photon-counting strip detectors. Charge clouds and detailed carrier transport are simulated and compared using two different approaches including analytical and Monte Carlo schema. The results of the simulations are evaluated using pulse-height spectra (PHS) for a silicon strip detector with edge on geometry at two energies (25 and 75 keV) at various X-ray absorption locations relative to the pixel boundary and detector depth. The findings confirm carrier diffusion plays a large role in the charge sharing effect in photon counting detectors, in particular when the photon is absorbed near the pixel boundary far away from the pixel electrode. The results are further compared in terms of the double-counting probability for X-ray photons absorbed near the pixel boundary as a function of the threshold energy. Monte Carlo and analytical models show reasonable agreement (2% relative error in swank factor) for charge sharing effects for a silicon strip detector with edge-on geometry. For 25 keV mono-energetic photons absorbed at 5 mu m from the pixel boundary, the theoretical threshold energy at 10% double-counting probability based on charge sharing is 5.5, 8.5 and 9.2 keV for absorption depths of 50, 250 and 450 mu m from the electrode, respectively. The transport of charge clouds affects the spectral characteristics of photon counting detectors and the double-counting probability results show the theoretical threshold energy to avoid double-counting as a function of X-ray energy and X-ray interaction locations for silicon and can be considered for future studies of charge sharing effects.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2018. Vol. 899, p. 115-121
Keywords [en]
Photon-counting, Silicon detector, Charge-sharing, Double-counting probability, Monte Carlo
National Category
Radiology, Nuclear Medicine and Medical Imaging
Identifiers
URN: urn:nbn:se:kth:diva-232225DOI: 10.1016/j.nima.2018.05.027ISI: 000436488100018Scopus ID: 2-s2.0-85047609140OAI: oai:DiVA.org:kth-232225DiVA, id: diva2:1233630
Note

QC 20180718

Available from: 2018-07-18 Created: 2018-07-18 Last updated: 2018-07-18Bibliographically approved

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Xu, ChengDanielsson, Mats

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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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