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Germanium on Insulator Fabrication for Monolithic 3-D Integration
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.ORCID iD: 0000-0003-0568-0984
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2018 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 6, no 1, p. 588-593Article in journal (Refereed) Published
Abstract [en]

A low temperature (T-max = 350 degrees C) process for Germanium (Ge) on insulator (GOI) substrate fabrication with thicknesses of less than 25 nm is reported in this paper. The process is based on a single step epitaxial growth of a Ge/SiGe/Ge stack on Si, room temperature wafer bonding and an etch-back process using Si0.5Ge0.5 as an etch-stop layer. GOI substrates with surface roughness below 0.5 nm, 0.15% tensile strain, thickness nonuniformity of less than 3 nm and residual p-type doping of less than 1016 cm(-3) were fabricated. Ge pFETs are fabricated (T-max = 600 degrees C) on the GOI wafer with 70% yield. The devices exhibit a negative threshold voltage of -0.18 V and 60% higher mobility than the SOI pFET reference devices.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 6, no 1, p. 588-593
Keywords [en]
GOI, wafer bonding, selective etching, GOI MOSFET, 3D integration
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-231645DOI: 10.1109/JEDS.2018.2801335ISI: 000435505000007Scopus ID: 2-s2.0-85041650674OAI: oai:DiVA.org:kth-231645DiVA, id: diva2:1245065
Funder
Swedish Foundation for Strategic Research
Note

QC 20180904

Available from: 2018-09-04 Created: 2018-09-04 Last updated: 2018-10-19Bibliographically approved

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Abedin, AhmadZurauskaite, LauraAsadollahi, AliGaridis, KonstantinosJayakumar, GaneshMalm, B. GunnarHellström, Per-ErikÖstling, Mikael

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Abedin, AhmadZurauskaite, LauraAsadollahi, AliGaridis, KonstantinosJayakumar, GaneshMalm, B. GunnarHellström, Per-ErikÖstling, Mikael
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