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Massively parallel fabrication of crack-defined gold break junctions featuring sub-3 nm gaps for molecular devices
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.ORCID iD: 0000-0001-6731-3886
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems.
Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands..
Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands..
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2018 (English)In: Nature Communications, E-ISSN 2041-1723, Vol. 9, article id 3433Article in journal (Refereed) Published
Abstract [en]

Break junctions provide tip-shaped contact electrodes that are fundamental components of nano and molecular electronics. However, the fabrication of break junctions remains notoriously time-consuming and difficult to parallelize. Here we demonstrate true parallel fabrication of gold break junctions featuring sub-3 nm gaps on the wafer-scale, by relying on a novel self-breaking mechanism based on controlled crack formation in notched bridge structures. We achieve fabrication densities as high as 7 million junctions per cm(2), with fabrication yields of around 7% for obtaining crack-defined break junctions with sub-3 nm gaps of fixed gap width that exhibit electron tunneling. We also form molecular junctions using dithiol-terminated oligo(phenylene ethynylene) (OPE3) to demonstrate the feasibility of our approach for electrical probing of molecules down to liquid helium temperatures. Our technology opens a whole new range of experimental opportunities for nano and molecular electronics applications, by enabling very large-scale fabrication of solid-state break junctions.

Place, publisher, year, edition, pages
Nature Publishing Group, 2018. Vol. 9, article id 3433
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-234594DOI: 10.1038/s41467-018-05785-2ISI: 000442594800035PubMedID: 30143636Scopus ID: 2-s2.0-85052211020OAI: oai:DiVA.org:kth-234594DiVA, id: diva2:1248314
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QC 20180914

Available from: 2018-09-14 Created: 2018-09-14 Last updated: 2023-03-28Bibliographically approved

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Dubois, Valentin J.Raja, Shyamprasad NatarajanNiklaus, FrankStemme, Göran

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