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4H-SiC pMOSFETs with al-doped S/D and NbNi silicide ohmic contacts
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2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications, 2018, p. 423-427Conference paper, Published paper (Refereed)
Abstract [en]

4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200°C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni stack, Nb-Ni Alloy, Ni and Nb/Ti were investigated, and the Nb/Ni stack silicide with the contact resistance of 5.04×10-3 Ωcm2 were applied for the pMOSFETs.

Place, publisher, year, edition, pages
Trans Tech Publications, 2018. p. 423-427
Keywords [en]
4H-SiC, Harsh environment electronics, Nickel, Niobium, Ohmic contact, pMOSFET, Binary alloys, Electric contactors, MOSFET devices, Nickel alloys, Niobium alloys, Ohmic contacts, Silicides, Titanium alloys, Al doped, Harsh environment, Ni alloys, p-MOSFETs, P-type 4H-SiC, Silicon carbide
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-236375DOI: 10.4028/www.scientific.net/MSF.924.423Scopus ID: 2-s2.0-85049023373ISBN: 9783035711455 (print)OAI: oai:DiVA.org:kth-236375DiVA, id: diva2:1260849
Conference
17 September 2017 through 22 September 2017
Note

QC 20181105

Available from: 2018-11-05 Created: 2018-11-05 Last updated: 2018-11-05Bibliographically approved

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Östling, MikaelZetterling, Carl-Mikael

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School of Electrical Engineering and Computer Science (EECS)Integrated devices and circuits
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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More styles
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  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
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Output format
  • html
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