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Conductivity modulated and implantation-free 4H-SiC ultra-high-voltage PiN Diodes
KTH.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Electrical Engineering and Computer Science (EECS).ORCID iD: 0000-0002-5845-3032
2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications Inc., 2018, p. 568-572Conference paper, Published paper (Refereed)
Abstract [en]

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2 are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2018. p. 568-572
Keywords [en]
4H-SiC PiN diode, Conductivity modulation, Differential on-resistance, Forward voltage drop, Implantation-free, Ultra-high-voltage, Diodes, Heterojunction bipolar transistors, Leakage currents, Modulation, Nitrogen compounds, Semiconductor junctions, Silicon carbide, Forward voltage drops, On-resistance, SiC PiN diodes, Ultra high voltage, Power semiconductor diodes
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-236358DOI: 10.4028/www.scientific.net/MSF.924.568Scopus ID: 2-s2.0-85049010479ISBN: 9783035711455 OAI: oai:DiVA.org:kth-236358DiVA, id: diva2:1261001
Conference
17 September 2017 through 22 September 2017
Note

QC 20181106

Available from: 2018-11-06 Created: 2018-11-06 Last updated: 2018-11-06Bibliographically approved

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Authority records BETA

Salemi, ArashElahipanah, HosseinZetterling, Carl-MikaelÖstling, Mikael

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Salemi, ArashElahipanah, HosseinZetterling, Carl-MikaelÖstling, Mikael
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KTHIntegrated devices and circuitsSchool of Electrical Engineering and Computer Science (EECS)
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