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Surface erosion of ion-implanted 4H-SiC during annealing with carbon cap
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-8760-1137
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2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications Inc., 2018, Vol. 924, p. 373-376Conference paper, Published paper (Refereed)
Abstract [en]

The stability/ erosion of the interface between a C-cap and 4H-SiC have been studied by secondary ion mass spectrometry (SIMS). Aluminum implantation has been used to monitor the position of the moving interface as well as to investigate the influence on the interface stability by the crystal quality of the 4H-SiC. After Al implantation a C-cap has been deposited by pyrolysis of photoresist. Subsequent annealing has been performed at 1900 and 2000 °C with durations between 15 minutes and 1 hour. SIMS measurements have been performed without removal of the C-cap. The surface remains smooth after the heat treatment, but a large amount of SiC material from the uppermost part of the wafer is lost. The amount of lost material is related to for instance annealing temperature, ambient conditions and ion induced crystal damage. This contribution gives a brief account of the processes governing the SiC surface decomposition during C-cap post implant annealing.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2018. Vol. 924, p. 373-376
Series
Materials Science Forum, ISSN 0255-5476 ; 924
Keywords [en]
Annealing, Carbon-cap, SIMS
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-238421DOI: 10.4028/www.scientific.net/MSF.924.373Scopus ID: 2-s2.0-85049021647ISBN: 9783035711455 (print)OAI: oai:DiVA.org:kth-238421DiVA, id: diva2:1261363
Conference
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017; Columbia; United States; 17 September 2017 through 22 September 2017
Note

QC 20181107

Available from: 2018-11-07 Created: 2018-11-07 Last updated: 2018-11-07Bibliographically approved

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Linnarsson, Margareta K.Hallén, Anders

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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Language
  • de-DE
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  • Other locale
More languages
Output format
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