Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Radiation hardness for silicon oxide and aluminum oxide on 4H-SiC
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-8760-1137
2018 (English)In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Trans Tech Publications Inc., 2018, Vol. 924, p. 229-232Conference paper, Published paper (Refereed)
Abstract [en]

The radiation hardness of two dielectrics, SiO2 and Al2O3, deposited on low doped, ntype 4H-SiC epitaxial layers has been investigated by exposing MOS structures involving these materials to MeV proton irradiation. The samples are examined by capacitance voltage (CV) measurements and, from the flat band voltage shift, it is concluded that positive charge is induced in the exposed structures detectable for fluence above 1×1011 cm-2. The positive charge increases with proton fluence, but the SiO2/4H-SiC structures are slightly more sensitive, showing that Al2O3 can provide a more radiation hard passivation, or gate dielectric for 4H-SiC devices.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2018. Vol. 924, p. 229-232
Series
Materials Science Forum, ISSN 0255-5476 ; 924
Keywords [en]
Capacitance, Charge, Dielectric, Flat band voltage, Irradiation, Protons
National Category
Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:kth:diva-238397DOI: 10.4028/www.scientific.net/MSF.924.229Scopus ID: 2-s2.0-85049034444ISBN: 9783035711455 (print)OAI: oai:DiVA.org:kth-238397DiVA, id: diva2:1261787
Conference
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 17 September 2017 through 22 September 2017
Note

QC 20181108

Available from: 2018-11-08 Created: 2018-11-08 Last updated: 2018-11-08Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Hallén, Anders

Search in DiVA

By author/editor
Hallén, Anders
By organisation
Integrated devices and circuits
Other Engineering and Technologies

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 180 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf