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A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
KTH, School of Electrical Engineering and Computer Science (EECS).ORCID iD: 0000-0002-5845-3032
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2018 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 10, p. 1540-1543Article in journal (Refereed) Published
Abstract [en]

Ring oscillators (ROs) are used to study the high-temperature characteristics of an in-house silicon carbide (SiC) technology. Design and successful operation of the in-house-fabricated 4H-SiC n-p-n bipolar transistors and TTL inverter-based 11-stage RO are reported from 25 degrees C to 600 degrees C. Non-monotonous temperature dependence was observed for the oscillator frequency; in the range of 25 degrees C to 300 degrees C, it increased with the temperature (1.33 MHz at 300 degrees C and V-CC = 15 V), while it decreased in the range of 300 degrees C-600 degrees C. The oscillator output frequency and delay were also characterized over a wide range of supply voltage (10 to 20 V). The noise margins of the TTL inverter were also measured; noise margin low (NML) decreases with the temperature, whereas noise margin high (NMH) increases with the temperature. The measured power-delay product (P-D . T-P) of the TTL inverter and 11-stage RO was approximate to 4.5 and approximate to 285 nJ, respectively, at V-CC= 15 V. Reliability testing indicated that the RO frequency of oscillation decreased 16% after HT characterization.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2018. Vol. 39, no 10, p. 1540-1543
Keywords [en]
Ring oscillator, TTL gates, Bipolar SiC gates, high temperature digital integrated circuits (ICs), transistor-transistor logic, silicon carbide electronics
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-237111DOI: 10.1109/LED.2018.2864338ISI: 000446449300014Scopus ID: 2-s2.0-85050029554OAI: oai:DiVA.org:kth-237111DiVA, id: diva2:1264475
Note

QC 20181120

Available from: 2018-11-20 Created: 2018-11-20 Last updated: 2019-05-23Bibliographically approved
In thesis
1. Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide
Open this publication in new window or tab >>Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide
2019 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Electronics such as microprocessors are highly demanded to monitor or control a process or operation in temperature critical (300 ºC to 600 °C) applications. State-of-the-art silicon-based integrated circuits (ICs) have been improved significantly throughout the years but mainly for a low-temperature ambient. At a temperature higher than 300 ºC silicon-on-insulator (SOI) or bulk silicon-based electronics cannot operate reliably. Therefore the wide bandgap (WBG) semiconductor materials such as silicon carbide (SiC) come into play.

In recent years, many types of SiC-based devices and low complex ICs have been reported and are operational at a high temperature (HT). The main goal of the thesis is to explore and demonstrate the feasibility of SiC-based circuits that are complex, dense and monolithically integrated for high-temperature applications such as a central-processing-unit (CPU).

This thesis work demonstrates a Process Design Kit (PDK) for the SiC-based large scale integrated (LSI) circuits implementation. It consists of discrete devices, gate and module library, and SiC ICs verification programs. The thesis work reports the PDK results over the full temperature range of 25 to 500 °C with a power supply of 10 V to 20 V.

The thesis work demonstrates a 4-bit CPU architecture designed for a proposed instruction set. Manual place and route with around 10,000 devices and area of 150 mm2 were carried out using the PDK standard cell library. The CPU and integral parts have been implemented at the transistor level using the PDK gate/module library and simulated from 25 to 500 °C. The CPU has been fabricated in the in-house low-power SiC bipolar process and measured at a high temperature.

The thesis work also reports reference analog and mixed-signal ICs. A 555-timer consisting of both digital and analog circuits has been designed, integrated and characterized up to 500 °C. Flash and SAR ADCs have been implemented using the PDK for HT applications. A 256-pixel image-sensor design and layout were also carried out using the PDK.

This thesis work is an important step and has laid the foundation of SiC-based LSI circuits realization for extreme environment applications.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2019. p. vii-xix, 148
Series
TRITA-EECS-AVL ; 2019:53
Keywords
Silicon Carbide, high-temperature digital integrated circuits, process design kit (PDK), bipolar logic gates, transistor-transistor logic (TTL), TTL CPU, bipolar transistor, LSI Circuits, ASICs
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-251766 (URN)978-91-7873-225-8 (ISBN)
Public defence
2019-06-14, Sal-B, Kistagången 16, Kista, 10:00 (English)
Opponent
Supervisors
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20190521

Available from: 2019-05-21 Created: 2019-05-21 Last updated: 2019-05-21Bibliographically approved

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Shakir, MuhammadHou, ShuobenÖstling, MikaelZetterling, Carl-Mikael

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