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Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.ORCID iD: 0000-0001-9690-2292
KTH, School of Electrical Engineering and Computer Science (EECS).ORCID iD: 0000-0001-6705-1660
KTH, School of Electrical Engineering and Computer Science (EECS).ORCID iD: 0000-0002-5845-3032
2018 (English)In: Micromachines, ISSN 2072-666X, E-ISSN 2072-666X, Vol. 9, no 11, article id 544Article in journal (Refereed) Published
Abstract [en]

Silicon ribbons (SiRi) have been well-established as highly sensitive transducers for biosensing applications thanks to their high surface to volume ratio. However, selective and multiplexed detection of biomarkers remains a challenge. Further, very few attempts have been made to integrate SiRi with complementary-metal-oxide-semiconductor (CMOS) circuits to form a complete lab-on-chip (LOC). Integration of SiRi with CMOS will facilitate real time detection of the output signal and provide a compact small sized LOC. Here, we propose a novel pixel based SiRi device monolithically integrated with CMOS field-effect-transistors (FET) for real-time selective multiplexed detection. The SiRi pixels are fabricated on a silicon-on-insulator wafer using a top-down method. Each pixel houses a control FET, fluid-gate (FG) and SiRi sensor. The pixel is controlled by simultaneously applying frontgate (V-G) and backgate voltage (V-BG). The liquid potential can be monitored using the FG. We report the transfer characteristics (I-D-V-G) of N- and P-type SiRi pixels. Further, the I-D-V-G characteristics of the SiRis are studied at different V-BG. The application of V-BG to turn ON the SiRi modulates the subthreshold slope (SS) and threshold voltage (V-TH) of the control FET. Particularly, N-type pixels cannot be turned OFF due to the control NFET operating in the strong inversion regime. This is due to large V-BG (25 V) application to turn ON the SiRi sensor. Conversely, the P-type SiRi sensors do not require large V-BG to switch ON. Thus, P-type pixels exhibit excellent I-ON/I-OFF 10(6), SS of 70-80 mV/dec and V-TH of 0.5 V. These promising results will empower the large-scale cost-efficient production of SiRi based LOC sensors.

Place, publisher, year, edition, pages
MDPI , 2018. Vol. 9, no 11, article id 544
Keywords [en]
silicon ribbon pixel, silicon ribbon biosensor, lab-on-chip, SiRi CMOS integration, selective multiplexed detection, SiRi frontgate mode, SiRi backgate mode
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-240004DOI: 10.3390/mi9110544ISI: 000451314900007Scopus ID: 2-s2.0-85055740494OAI: oai:DiVA.org:kth-240004DiVA, id: diva2:1269324
Note

QC 20181210

Available from: 2018-12-10 Created: 2018-12-10 Last updated: 2018-12-10Bibliographically approved

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Jayakumar, GaneshHellström, Per-ErikÖstling, Mikael

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