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A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik.ORCID-id: 0000-0003-2540-8726
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar. Ascatron AB.ORCID-id: 0000-0002-7845-3988
University of Arkansas.
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0003-0565-9907
Vise andre og tillknytning
2019 (engelsk)Inngår i: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 7, nr 1, s. 191-195Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE), 2019. Vol. 7, nr 1, s. 191-195
Emneord [en]
4H-SiC BJT, high-temperature, LTCC, negative resistance, oscillator
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-245068DOI: 10.1109/JEDS.2018.2889638ISI: 000460753000029Scopus ID: 2-s2.0-85059455428OAI: oai:DiVA.org:kth-245068DiVA, id: diva2:1293928
Merknad

QC 20190311

Tilgjengelig fra: 2019-03-05 Laget: 2019-03-05 Sist oppdatert: 2019-10-17bibliografisk kontrollert
Inngår i avhandling
1. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
Åpne denne publikasjonen i ny fane eller vindu >>High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology
2019 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. In particular, analog, digital and mixed-signal integrated circuits, based on in-house SiC bipolar technology, have been shown to operate successfully for temperatures as high as 500 oC. This thesis aims at exploring the potential of in-house SiC bipolar technology for realizing high-temperature radio frequency (RF) circuits.

To that end, the in-house SiC bipolar junction transistors (BJTs) are first characterized up to 300 oC for RF figures of merit like unity current gain bandwidth and unity power gain bandwidth. The measurement results showed the feasibility of the current batch of SiC BJTs for developing RF circuits operating at low-end of very high frequency (VHF) band. Thereafter, three fundamental blocks of a high-temperature radio receiver, i.e. an intermediate-frequency amplifier, an oscillator and a down-conversion mixer were implemented. Firstly, an intermediate-frequency amplifier has been designed and measurement results demonstrated operation up to 251 oC. The proposed amplifier achieved a gain, input, and output matching of 16 dB, -7.5 dB and -11.2 dB, respectively, at 54.6 MHz and 251 oC. Next, 500 oC operation of an active down-conversion mixer has been exhibited. Measurements have shown that the conversion gain of the proposed mixer is 4.7 dB at 500 oC. Lastly, a negative resistance oscillator has been designed and tested successfully up to 400 oC. It has been shown that at 400 oC, the proposed oscillator delivers an output power of 8.4 dBm into a 50 Ω load.

In addition to SiC BJTs, the aforementioned circuits also employed spiral inductors implemented on PCBs, commercially available ceramic capacitors and thick-film resistors. Therefore, this thesis presents the evaluation of passives to assess their feasibility for high temperature operation. This work also identifies and addresses several challenges associated with the development flow of high-temperature RF circuits.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2019. s. viii-xix, 82
Serie
TRITA-EECS-AVL ; 2019:40
Emneord
4H-SiC, active down-conversion mixer, BJT, EM simulations, silicon carbide, high-temperature, IF amplifier, LTCC, negative resistance oscillator, passives, RF circuits
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-249972 (URN)978-91-7873-170-1 (ISBN)
Disputas
2019-05-29, Sal-C, Forum, Isafjordgatan 39, Kista, Stockholm, 13:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Knut and Alice Wallenberg Foundation, 66167
Merknad

QC 20190425

Tilgjengelig fra: 2019-04-25 Laget: 2019-04-24 Sist oppdatert: 2019-04-26bibliografisk kontrollert

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