Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Silicon Carbide High Temperature Photodetectors and Image Sensor
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik.ORCID-id: 0000-0001-8854-7446
2019 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. Driven by the objective of probing the high temperature surface of Venus (460 °C), this thesis develops SiC photodetectors and an image sensor for extremely high temperature functions. The devices and circuits are demonstrated through the procedure of layout design, in-house processing and characterizations on two batches.

The process flow has been optimized to be suitable for large scale integration (LSI) of SiC bipolar integrated circuits (IC). The improved processing steps are SiC dry etching, ohmic contacts and two-level metal interconnect with chemical-mechanical polishing (CMP). The optimized process flow is applied in the fabrication of discrete devices, a transistor-transistor logic (TTL) process design kit (PDK) and LSI circuits.

The photodetectors developed in this thesis, including photodiodes with various mesa areas, a phototransistor and a phototransistor Darlington pair have stable characteristics in a wide temperature range (25 °C ~ 500 °C). The maximum operational temperature of the p-i-n photodiode (550 °C) is the highest recorded temperature accomplished ever by a photodiode. The optical responsivity of the photodetectors covers the spectrum from 220 nm to 380 nm, which is UV-only.

The SiC pixel sensor and image sensor developed in this thesis are pioneer works. The pixel sensor overcomes the challenge of monolithic integration of SiC photodiode and transistors by sharing the same epitaxial layers and topside contacts. The pixel sensor is characterized from 25 °C to 500 °C. The whole image sensor circuit has 256 (16 ×16) pixel sensors and one 8-bit counter together with two 4-to-16 decoders for row/column selection. The digital circuits are built by the standard logic gates selected from the TTL PDK. The image sensor has 1959 transistors in total. The function of the image sensor up to 400 °C is verified by taking basic photos of nonuniform UV illumination on the pixel sensor array.

This thesis makes an important attempt on the demonstration of SiC opto-electronic on-chip integration. The results lay a foundation on the development of future high temperature high resolution UV image sensors.

Ort, förlag, år, upplaga, sidor
KTH Royal Institute of Technology, 2019. , s. 81
Serie
TRITA-EECS-AVL ; 2019:37
Nyckelord [en]
Silicon Carbide (SiC), high temperature, photodetector, photodiode, phototransistor, ultraviolet (UV), transistor-transistor logic (TTL), bipolar junction transistor (BJT), integrated circuit (IC), pixel sensor, image sensor
Nationell ämneskategori
Elektroteknik och elektronik
Forskningsämne
Informations- och kommunikationsteknik
Identifikatorer
URN: urn:nbn:se:kth:diva-248426ISBN: 978-91-7873-160-2 (tryckt)OAI: oai:DiVA.org:kth-248426DiVA, id: diva2:1303493
Disputation
2019-05-03, Ka-Sal B (Sal Peter Weissglas), Kistagången 16, Kista, 10:00 (Engelska)
Opponent
Handledare
Forskningsfinansiär
Knut och Alice Wallenbergs Stiftelse, Working on VenusStiftelsen för strategisk forskning (SSF), CMP Lab
Anmärkning

QC 20190411

Tillgänglig från: 2019-04-11 Skapad: 2019-04-09 Senast uppdaterad: 2019-04-11Bibliografiskt granskad
Delarbeten
1. Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits
Öppna denna publikation i ny flik eller fönster >>Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits
Visa övriga...
2019 (Engelska)Ingår i: Proceedings of the 3rd Electron Devices Technology and Manufacturing, (EDTM) Conference 2019, IEEE, 2019Konferensbidrag, Publicerat paper (Refereegranskat)
Ort, förlag, år, upplaga, sidor
IEEE, 2019
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
urn:nbn:se:kth:diva-248421 (URN)
Konferens
The 3rd Electron Devices Technology and Manufacturing (EDTM) Conference
Anmärkning

QC 20190411

Tillgänglig från: 2019-04-08 Skapad: 2019-04-08 Senast uppdaterad: 2019-04-11Bibliografiskt granskad
2. 550 degrees C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization
Öppna denna publikation i ny flik eller fönster >>550 degrees C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization
2016 (Engelska)Ingår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 37, nr 12, s. 1594-1596Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The p-i-n ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and characterized from room temperature (RT) to 550 degrees C. Due to bandgap narrowing at higher temperatures, the photocurrent of the photodiode increases by 9 times at 365 nm and reduces by 2.6 times at 275 nm from RT to 550 degrees C. Moreover, a 4H-SiC p-i-n photodiode array has been fabricated. Each column and row of the array is separately connected by two-layer metallization.

Ort, förlag, år, upplaga, sidor
IEEE, 2016
Nyckelord
4H-SiC, UV, photodiode, high temperature, two-layer metallization
Nationell ämneskategori
Elektroteknik och elektronik
Identifikatorer
urn:nbn:se:kth:diva-199496 (URN)10.1109/LED.2016.2618122 (DOI)000389332700016 ()2-s2.0-85000786021 (Scopus ID)
Anmärkning

QC 20170118

Tillgänglig från: 2017-01-18 Skapad: 2017-01-09 Senast uppdaterad: 2019-04-10Bibliografiskt granskad
3. Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes
Öppna denna publikation i ny flik eller fönster >>Scaling and modeling of high temperature 4H-SiC p-i-n photodiodes
2018 (Engelska)Ingår i: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 6, nr 1, s. 139-145, artikel-id 8240922Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

4H-SiC p-i-n photodiodes with various mesa areas (40,000μm2, 2500μm2, 1600μm2, and 400μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C, 400 °C, and 500 °C. The capacitance and photo current (at 365 nm) of the photodiodes are directly proportional to the area. However, the dark current density increases as the device is scaled down due to the perimeter surface recombination effect. The photo to dark current ratio at the full depletion voltage of the intrinsic layer (-2.7 V) of the photodiode at 500 °C decreases 7 times as the size of the photodiode scales down 100 times. The static and dynamic behavior of the photodiodes are modeled with SPICE parameters at the four temperatures.

Ort, förlag, år, upplaga, sidor
Institute of Electrical and Electronics Engineers Inc., 2018
Nyckelord
4H-SiC, high temperature, photodiode, scaling, Capacitance, Photodiodes, Silicon carbide, Dark current ratio, Full-depletion voltage, IV characteristics, Static and dynamic behaviors, Surface recombinations, Silicon compounds
Nationell ämneskategori
Elektroteknik och elektronik
Identifikatorer
urn:nbn:se:kth:diva-223196 (URN)10.1109/JEDS.2017.2785618 (DOI)000423582900022 ()2-s2.0-85040046747 (Scopus ID)
Forskningsfinansiär
Knut och Alice Wallenbergs Stiftelse
Anmärkning

Export Date: 13 February 2018; Article; Correspondence Address: Hou, S.; School of Information and Communication Technology, KTH Royal Institute of TechnologySweden; email: shuoben@kth.se; Funding details: Knut och Alice Wallenbergs Stiftelse; Funding details: KTH, Kungliga Tekniska Högskolan. QC 20180228

Tillgänglig från: 2018-02-28 Skapad: 2018-02-28 Senast uppdaterad: 2019-04-10Bibliografiskt granskad
4. High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor
Öppna denna publikation i ny flik eller fönster >>High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor
2019 (Engelska)Konferensbidrag, Muntlig presentation med publicerat abstract (Refereegranskat)
Abstract [en]

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 ºC. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 ºC. The βFmax drops to 51 at 400 ºC and remains the same at 500 ºC. The photo current gain of the phototransistor is 3.9 at 25 ºC and increases to 14 at 500 ºC under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4HSiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics onchip integration.

Nyckelord
4H-SiC, Phototransistor, Integrated Circuit (IC), High Temperature
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
urn:nbn:se:kth:diva-248422 (URN)
Konferens
European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
Anmärkning

QC 20190410

Tillgänglig från: 2019-04-08 Skapad: 2019-04-08 Senast uppdaterad: 2019-04-10Bibliografiskt granskad
5. A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode
Öppna denna publikation i ny flik eller fönster >>A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode
2019 (Engelska)Ingår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 40, nr 1, s. 51-54Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

This letter presents the design, fabrication, and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and photodiode share the same epitaxial layers and topside contacts for each terminal. By connecting the collector of the transistor and the anode of the photodiode, the photo current from the photodiode is switched off at low base voltage (cutoff region of the transistor) and switched on at high base voltage (saturation region of the transistor). The transfer voltage of the circuit decreases as the ambient temperature increases (2 mV/degrees C). Both the on-state and off-state current of the circuit have a positive temperature coefficient and the on/off ratio is >80 at temperature ranged from 25 degrees C to 400 degrees C. It is proposed that the on/off ratio can be increased by similar to 1000 times by adding a light blocking layer on the transistor to reduce light induced off-state current in the circuit.

Ort, förlag, år, upplaga, sidor
Institute of Electrical and Electronics Engineers (IEEE), 2019
Nyckelord
4H-SiC, BJT, UV, photodiode, high temperature, switch
Nationell ämneskategori
Elektroteknik och elektronik
Identifikatorer
urn:nbn:se:kth:diva-242990 (URN)10.1109/LED.2018.2883749 (DOI)000456172600013 ()2-s2.0-85057777289 (Scopus ID)
Forskningsfinansiär
Knut och Alice Wallenbergs Stiftelse
Anmärkning

QC 20190204

Tillgänglig från: 2019-02-04 Skapad: 2019-02-04 Senast uppdaterad: 2019-04-10Bibliografiskt granskad
6. Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications
Öppna denna publikation i ny flik eller fönster >>Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications
Visa övriga...
2019 (Engelska)Ingår i: Electronics, ISSN 2079-9292, Vol. 8, nr 5Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta (β) and collector current (IC) variation of SiC devices as temperature increases. The PDK-based complex digital ICsdesign flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.

Nyckelord
Process Design Kit (PDK); bipolar logic gates; high temperature digital integrated circuits (ICs); transistor–transistor logic (TTL); SiC bipolar transistor; SiC VLSI Circuits
Nationell ämneskategori
Teknik och teknologier Elektroteknik och elektronik
Identifikatorer
urn:nbn:se:kth:diva-248424 (URN)10.3390/electronics8050496 (DOI)000470999900027 ()2-s2.0-85067024612 (Scopus ID)
Forskningsfinansiär
Knut och Alice Wallenbergs Stiftelse, Working on Venus
Anmärkning

QC 20190410

Tillgänglig från: 2019-04-08 Skapad: 2019-04-08 Senast uppdaterad: 2020-03-02Bibliografiskt granskad

Open Access i DiVA

fulltext(38454 kB)463 nedladdningar
Filinformation
Filnamn FULLTEXT01.pdfFilstorlek 38454 kBChecksumma SHA-512
d7bf7f1de7d49f45e38d74e30238f686a5289003caeeb89d4b8d6cf864eaed6e0ba18b05112cbea3d058a40c6a29ef60aabc4dd995cc9ea33cafe1662db1c465
Typ fulltextMimetyp application/pdf

Sök vidare i DiVA

Av författaren/redaktören
Hou, Shuoben
Av organisationen
Elektronik
Elektroteknik och elektronik

Sök vidare utanför DiVA

GoogleGoogle Scholar
Totalt: 463 nedladdningar
Antalet nedladdningar är summan av nedladdningar för alla fulltexter. Det kan inkludera t.ex tidigare versioner som nu inte längre är tillgängliga.

isbn
urn-nbn

Altmetricpoäng

isbn
urn-nbn
Totalt: 3676 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf