Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss
KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
Vise andre og tillknytning
2019 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, nr 5, s. 2307-2313, artikkel-id 8681267Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) structure with low ON-resistance (R ON ) and switching energy loss is proposed. The novel structure features an added n-type region, which reduces ON-resistance of the device significantly while maintaining the breakdown voltage (V BR ). In addition, the gate of the improved structure is designed as a p-n junction to reduce the switching energy loss. Simulations by Sentaurus TCAD are carried out to reveal the working mechanism of this improved structure. For the static performance, the ON-resistance and the figure of merit (FOM = V BR 2 /R ON ) of the optimized structure are improved by 40% and 44%, respectively, as compared to a conventional trench MOSFET without the added n-type region and modified gate. For the dynamic performance, the turn-on time (T ON ) and turn-off time (T OFF ) of the proposed structure are both shorter than that of the conventional structure, bringing a 43% and 30% reduction in turn-on energy loss and total switching energy loss (E SW ). © 2019 IEEE.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers Inc. , 2019. Vol. 66, nr 5, s. 2307-2313, artikkel-id 8681267
Emneord [en]
Breakdown voltage, ON-resistance, silicon carbide, switching energy loss, U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs), Dielectric devices, Electric breakdown, Energy dissipation, Metallic compounds, Metals, MOS devices, Oxide semiconductors, Semiconducting silicon compounds, Semiconductor junctions, Switching, Transistors, Wide band gap semiconductors, Conventional structures, Dynamic performance, Improved structures, Optimized structures, Switching energy, Trench gates, Trench-gate mosfet, MOSFET devices
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-252507DOI: 10.1109/TED.2019.2905636Scopus ID: 2-s2.0-85064973294OAI: oai:DiVA.org:kth-252507DiVA, id: diva2:1336857
Merknad

QC 20190710

Tilgjengelig fra: 2019-07-10 Laget: 2019-07-10 Sist oppdatert: 2019-07-10bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Hallén, Anders

Søk i DiVA

Av forfatter/redaktør
Hallén, Anders
Av organisasjonen
I samme tidsskrift
IEEE Transactions on Electron Devices

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 39 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf