Modelling radiation damage to pixel sensors in the ATLAS detectorShow others and affiliations
Number of Authors: 28802019 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 14, article id P06012Article in journal (Refereed) Published
Abstract [en]
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2019. Vol. 14, article id P06012
Keywords [en]
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors
National Category
Subatomic Physics
Identifiers
URN: urn:nbn:se:kth:diva-255217DOI: 10.1088/1748-0221/14/06/P06012ISI: 000472134700001Scopus ID: 2-s2.0-85070359632OAI: oai:DiVA.org:kth-255217DiVA, id: diva2:1338828
Note
QC 20190724
2019-07-242019-07-242022-06-26Bibliographically approved