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An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss
KTH, Tidigare Institutioner (före 2005), Elektronik. KTH, Skolan för elektroteknik och datavetenskap (EECS), Elektronik, Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
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2019 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, nr 5, s. 2307-2313Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) structure with low ON-resistance (R-ON) and switching energy loss is proposed. The novel structure features an added n-type region, which reduces ON-resistance of the device significantly while maintaining the breakdown voltage (V-BR). In addition, the gate of the improved structure is designed as a p-n junction to reduce the switching energy loss. Simulations by Sentaurus TCAD are carried out to reveal the working mechanism of this improved structure. For the static performance, the ON-resistance and the figure of merit (FOM = V-BR(2)/R-ON) of the optimized structure are improved by 40% and 44%, respectively, as compared to a conventional trench MOSFET without the added n-type region and modified gate. For the dynamic performance, the turn-on time (T-ON) and turn-off time (T-OFF) of the proposed structure are both shorter than that of the conventional structure, bringing a 43% and 30% reduction in turn-on energy loss and total switching energy loss (E-SW).

sted, utgiver, år, opplag, sider
2019. Vol. 66, nr 5, s. 2307-2313
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Identifikatorer
URN: urn:nbn:se:kth:diva-252987DOI: 10.1109/TED.2019.2905636ISI: 000466028500041OAI: oai:DiVA.org:kth-252987DiVA, id: diva2:1342816
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QC 20190814

Tilgjengelig fra: 2019-08-14 Laget: 2019-08-14 Sist oppdatert: 2019-08-14bibliografisk kontrollert

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