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Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide
Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland..
Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland..
Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland..
Univ Valencia, ICMUV, Inst Ciencia Mat, POB 2208546071, Valencia, Spain..
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2019 (English)In: Nature Communications, E-ISSN 2041-1723, Vol. 10, article id 3913Article in journal (Refereed) Published
Abstract [en]

Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.

Place, publisher, year, edition, pages
Springer Nature , 2019. Vol. 10, article id 3913
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Atom and Molecular Physics and Optics
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URN: urn:nbn:se:kth:diva-259420DOI: 10.1038/s41467-019-11920-4ISI: 000483305400004PubMedID: 31477714Scopus ID: 2-s2.0-85071752850OAI: oai:DiVA.org:kth-259420DiVA, id: diva2:1353950
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QC 20220503

Available from: 2019-09-24 Created: 2019-09-24 Last updated: 2023-03-28Bibliographically approved

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Branny, Artur

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