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High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.ORCID-id: 0000-0002-9040-4740
2008 (Engelska)Ingår i: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 44, nr 6, s. 414-416Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Reported are 1.3 mu m InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mu m large devices.

Ort, förlag, år, upplaga, sidor
2008. Vol. 44, nr 6, s. 414-416
Nyckelord [en]
Epitaxial growth; Lithography; Semiconducting indium gallium arsenide; Cavity region; Differential efficiency; Electrical confinement scheme
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-8626DOI: 10.1049/el:20080056ISI: 000254797500016Scopus ID: 2-s2.0-40749119753OAI: oai:DiVA.org:kth-8626DiVA, id: diva2:13998
Anmärkning
QC 20100825Tillgänglig från: 2008-06-03 Skapad: 2008-06-03 Senast uppdaterad: 2017-12-14Bibliografiskt granskad
Ingår i avhandling
1. Design and fabrication of long wavelength vertical cavity lasers on GaAs substrates
Öppna denna publikation i ny flik eller fönster >>Design and fabrication of long wavelength vertical cavity lasers on GaAs substrates
2008 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Vertical cavity surface emitting lasers (VCSELs) are today a commodity on the short wavelength laser market due to the ease with which they are manufactured. Much effort has in the last decade been directed towards making long wavelength VCSELs as successful in the marketplace. This has not been achieved due to the much more difficult fabrication technologies needed for realising high performance long wavelength VCSELs. At one point, GaInNAs quantum wells gain regions grown on GaAs substrates seemed to be the solution as it enabled all-epitaxial VCSELs that could make use of high contrast AlGaAs-based distributed Bragg reflectors (DBRs) as mirrors and lateral selective oxidation for optical and electrical confinement, thereby mimicking the successful design of short wavelength VCSELs. Although very good device results were achieved, reproducible and reliable epitaxial growth of GaInNAs quantum wells proved difficult and the technology has not made its way into high-volume production. Other approaches to the manufacturing and material problems have been to combine mature InP-based gain regions with high contrast AlGaAs-based DBRs by wafer fusion or with high contrast dielectric DBRs. Commonly, a patterned tunnel junction provides the electrical confinement in these VCSELs. Excellent performance has been achieved in this way but the fabrication process is difficult.

In this work, we have employed high strain InGaAs quantum wells along with large detuning between the gain peak and the emission wavelength to realize GaAs-based long wavelength VCSELs. All-epitaxial VCSELs with AlGaAs-based DBRs and lateral oxidation confinement were fabricated and evaluated. The efficiency of these VCSELs was limited due to the optical absorption in the doped DBRs. To improve the efficiency and manufacturability, two novel optical and electrical confinement schemes based on epitaxial regrowth of current blocking layers were developed. The first scheme is based on a single regrowth step and requires very precise processing. This scheme was therefore not developed beyond the first generation but single mode power of 0.3 mW at low temperature, -10ºC, was achieved. The second scheme is based on two epitaxial regrowth steps and does not require as precise processing. Several generations of this design were manufactured and resulted in record high power of 8 mW at low temperature, 5ºC, and more than 3 mW at high temperature, 85ºC. Single mode power was more modest with 1.5 mW at low temperature and 0.8 mW at high temperature, comparable to the performance of the single mode lateral oxidation confined VCSELs. The reason for the modest single mode power was found to be a non-optimal cavity shape after the second regrowth that leads to poor lateral overlap between the gain in the quantum wells and the intensity of the optical field.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH, 2008. s. 79
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:10
Nyckelord
VCSEL, Selective Area Epitaxy, Epitaxial regrowth, Laser
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
urn:nbn:se:kth:diva-4795 (URN)978-91-7178-990-7 (ISBN)
Disputation
2008-06-12, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:00
Opponent
Handledare
Anmärkning
QC 20100825Tillgänglig från: 2008-06-03 Skapad: 2008-06-03 Senast uppdaterad: 2010-08-25Bibliografiskt granskad

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Hammar, Mattias

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Marcks von Würtemberg, RickardBerggren, JesperDainese, MatteoHammar, Mattias
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