Early-stage silver growth during sputter deposition on SiO2 and polystyrene - Comparison of biased DC magnetron sputtering, high-power impulse magnetron sputtering (HiPIMS) and bipolar HiPIMSVise andre og tillknytning
2024 (engelsk)Inngår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 666, artikkel-id 160392Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]
The integration of silver thin films into optoelectronic devices has gained much interest due to their exceptional properties in terms of conductivity and compatibility with flexible substrates. For this type of application, ultrathin layers are desirable, because of their optical transparency. Standard direct current magnetron sputtering (DCMS) is known to lead to undesirable formation of islands at low effective film thicknesses on typical substrates like SiO2 or polystyrene (PS). Therefore, in this study, we explore high-power impulse magnetron sputtering (HiPIMS) with optional further acceleration of metal ions by biasing the substrate or an additional positive pulse (bipolar HiPIMS) for the fabrication of ultra-thin silver layers. The morphology and electrical properties of ultra-thin silver layers with selected effective thicknesses are characterized on SiO2 and PS substrates. The growth evolution of characteristic parameters is further investigated by in-situ grazing-incidence small-angle Xray scattering (GISAXS). The results show that HiPIMS deposition yields films with a higher density of clusters than DCMS leading to a percolation threshold at lower effective film thicknesses. This effect is amplified by further ion acceleration. Thus, we suggest HiPIMS as a promising technique for fabricating ultra-thin, conductive layers on organic and oxide substrates.
sted, utgiver, år, opplag, sider
Elsevier BV , 2024. Vol. 666, artikkel-id 160392
Emneord [en]
Early growth, HiPIMS, BP-HiPIMS, Silver, GISAXS, SiO 2 /PS substrate
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-349749DOI: 10.1016/j.apsusc.2024.160392ISI: 001249283200001Scopus ID: 2-s2.0-85194458645OAI: oai:DiVA.org:kth-349749DiVA, id: diva2:1881915
Merknad
QC 20240704
2024-07-042024-07-042024-07-04bibliografisk kontrollert