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Electroabsorption Modulators Suitable for 100-Gb/s Ethernet
(Photonic Research Center)
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101). (Photonic Research Center)ORCID-id: 0000-0001-7056-4379
Vise andre og tillknytning
2008 (engelsk)Inngår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 29, nr 9, s. 1014-1016Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The design of a traveling-wave electroabsorption modulator (TWEAM) has been improved to decrease the drive voltage. The absorption layer was optimized and together with a novel segmentation of microwave design was introduced to increase the active modulator length. The resulting -3-dBe bandwidth of fabricated devices was estimated to be 99 GHz. Extinction ratios of 10 dB back-to-back and 6.7 dB after transmission over 2.2-km long fiber were measured with an incident drive voltage of only 2 V peak to peak. This TWEAM performance is believed to constitute a new state of the art for modulators suitable for 100-Gb/s Ethernet with on-off keying.

sted, utgiver, år, opplag, sider
2008. Vol. 29, nr 9, s. 1014-1016
Emneord [en]
high-speed modulator, optoelectronics, wave-guide modulators
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-11141DOI: 10.1109/LED.2008.2001970ISI: 000259573400014Scopus ID: 2-s2.0-50649101955OAI: oai:DiVA.org:kth-11141DiVA, id: diva2:236366
Merknad

QC 20100707

Tilgjengelig fra: 2009-09-22 Laget: 2009-09-22 Sist oppdatert: 2017-12-13bibliografisk kontrollert
Inngår i avhandling
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Åpne denne publikasjonen i ny fane eller vindu >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2009. s. xii, 72
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-11149 (URN)
Disputas
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (engelsk)
Opponent
Veileder
Merknad
QC 20100707Tilgjengelig fra: 2009-09-22 Laget: 2009-09-22 Sist oppdatert: 2010-07-21bibliografisk kontrollert

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