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Dynamic properties of electrically p-n confined, epitaxially regrown 1.27 μm InGaAs single-mode vertical-cavity surface-emitting lasers
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).ORCID-id: 0000-0003-3056-4678
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik (Stängd 20120101), Fotonik (Stängd 20120101).ORCID-id: 0000-0001-7056-4379
Visa övriga samt affilieringar
2009 (Engelska)Ingår i: IET optoelectronics, ISSN 1751-8768, Vol. 3, nr 3, s. 163-167Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The dynamic performance including chirp measurements of 1.27 mu m single-mode InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a large gain-cavity offset is presented. The VCSELs are based on a novel p-n confinement structure with selective area epitaxial regrowth. A resonance frequency of 9.11 GHz, a slope efficiency of 0.25 W/A and an alpha-factor of 5.7 were measured. The modulation bandwidth is limited by electrical parasitics. Eye diagrams at 5 Gb/s with 7 dB extinction ratio and Q-factor around 5 were obtained. The results are compared with the performance of oxide-confined VCSELs with similar active layer and negative gain-cavity detuning.

Ort, förlag, år, upplaga, sidor
2009. Vol. 3, nr 3, s. 163-167
Nyckelord [en]
PERFORMANCE; VCSELS
Nationell ämneskategori
Atom- och molekylfysik och optik
Identifikatorer
URN: urn:nbn:se:kth:diva-11146DOI: 10.1049/iet-opt.2008.0066ISI: 000267060300006Scopus ID: 2-s2.0-65949122752OAI: oai:DiVA.org:kth-11146DiVA, id: diva2:236375
Anmärkning

QC 20100707

Tillgänglig från: 2009-09-22 Skapad: 2009-09-22 Senast uppdaterad: 2016-12-19Bibliografiskt granskad
Ingår i avhandling
1. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
Öppna denna publikation i ny flik eller fönster >>Dynamic Characterization of Semiconductor Lasers and Intensity Modulators
2009 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences.The introduction starts with the physical background and a review of thesemiconductor material properties which both affects the design andfabrication of the devices and determine their performance in applicationssuch as wavelength, optical power and attenuation, drive current andvoltage, temperature sensitivity and modulation bandwidth.The next chapter of the introduction is dedicated to various kinds ofsemiconductor lasers. It describes the physical principles, steady stateoperation and the dynamical response. The laser is essentially an opticalcavity consisting of a material with optical gain inbetween two reflectivemirrors. Special attention is given to the spectral shape of the mirrorreflectivity and its effect on the laser dynamics and how these effects canbe distinguished from those of the gain material.In order to improve dynamic performance, it is common that the laser,instead of being directly modulated by varying the drive current, isconnected to a separate modulator. The next chapter is therefore devotedto electroabsorption modulators for high speed intensity modulation andtheir integration to lasers. In order to fully take advantage of the highintrinsic modulation bandwidth of these devices it is important to havea good microwave design to avoid electrical parasitics. A segmented paddesign to achieve this is briefly described.The last part of the introduction covers measurements techniques that wereimplemented to experimentally investigate above devices. A description ofthe measurement methods, including practical hints and methods forevaluation of the measured results are provided.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH, 2009. s. xii, 72
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2009:8
Nationell ämneskategori
Atom- och molekylfysik och optik
Identifikatorer
urn:nbn:se:kth:diva-11149 (URN)
Disputation
2009-09-30, KTH-Electrum, sal/ hall C2, Isafjordsgatan 26, Kista, 10:00 (Engelska)
Opponent
Handledare
Anmärkning
QC 20100707Tillgänglig från: 2009-09-22 Skapad: 2009-09-22 Senast uppdaterad: 2010-07-21Bibliografiskt granskad

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Förlagets fulltextScopushttp://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4976836&sourceID=ISI

Personposter BETA

Schatz, RichardWestergren, UrbanHammar, Mattias

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Av författaren/redaktören
Chacinski, MarekSchatz, RichardWestergren, UrbanBerggren, JesperYu, X.Marcks Von Würtemberg, RichardHammar, Mattias
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Mikroelektronik och tillämpad fysik, MAPFotonik (Stängd 20120101)KTHMikroelektronik och Informationsteknik, IMITIntegrerade komponenter och kretsar
Atom- och molekylfysik och optik

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