Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphireShow others and affiliations
2007 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 36, no 12, p. 1621-1624Article in journal (Refereed) Published
Abstract [en]
Carrier trapping of Fe (3+)/Fe2+ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10(18) cm(-3), the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe3+ ions, which is equal to 1.9 x 10(-15) cm(2). The upper bound for the cross-section of the hole capture of Fe2+ was evaluated as 10 x 10(-15) cm
Place, publisher, year, edition, pages
2007. Vol. 36, no 12, p. 1621-1624
Keywords [en]
GaN, Fe, semi-insulating, high electron mobility transistor (HEMT), deep acceptor, electron capture cross section, metal-organic vapor phase epitaxy (MOVPE), OPTICAL-PROPERTIES, LAYERS, LEVEL, IRON, INP
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-13653DOI: 10.1007/s11664-007-0202-9ISI: 000250884200014Scopus ID: 2-s2.0-36148953872OAI: oai:DiVA.org:kth-13653DiVA, id: diva2:326321
Note
QC 20100623
2010-06-222010-06-222022-06-25Bibliographically approved
In thesis