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Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Optik.ORCID-id: 0000-0002-4606-4865
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.ORCID-id: 0000-0002-0292-224X
Vise andre og tillknytning
2007 (engelsk)Inngår i: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 36, nr 12, s. 1621-1624Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Carrier trapping of Fe (3+)/Fe2+ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10(18) cm(-3), the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe3+ ions, which is equal to 1.9 x 10(-15) cm(2). The upper bound for the cross-section of the hole capture of Fe2+ was evaluated as 10 x 10(-15) cm

sted, utgiver, år, opplag, sider
2007. Vol. 36, nr 12, s. 1621-1624
Emneord [en]
GaN, Fe, semi-insulating, high electron mobility transistor (HEMT), deep acceptor, electron capture cross section, metal-organic vapor phase epitaxy (MOVPE), OPTICAL-PROPERTIES, LAYERS, LEVEL, IRON, INP
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-13653DOI: 10.1007/s11664-007-0202-9ISI: 000250884200014Scopus ID: 2-s2.0-36148953872OAI: oai:DiVA.org:kth-13653DiVA, id: diva2:326321
Merknad
QC 20100623Tilgjengelig fra: 2010-06-22 Laget: 2010-06-22 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Gallium nitride templates and its related materials for electronic and photonic devices
Åpne denne publikasjonen i ny fane eller vindu >>Gallium nitride templates and its related materials for electronic and photonic devices
2008 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

 

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. xiv, 89
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:8
Emneord
GaN, heteroepitaxy of GaN, BGaAlN, Fe doped GaN, HEMT, carrier capture cross section, intersubband transition modulator
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4759 (URN)978-91-7178-981-5 (ISBN)
Disputas
2008-06-05, N2, Electrum 3, Isafjordsgatan 28 A/D, Kista, 10:15
Opponent
Veileder
Merknad
QC 20100623Tilgjengelig fra: 2008-05-16 Laget: 2008-05-16 Sist oppdatert: 2010-09-20bibliografisk kontrollert

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