Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Self-heating effects in a BiCMOS on SOI technology for RFIC applications
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6459-749X
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
2005 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 52, nr 7, s. 1423-1428Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Self-heating in a 0.25 mu m BiCMOS technology with different isolation structures, including shallow and deep trenches on bulk and silicon-on-insulator (SOI) substrates, is characterized experimentally. Thermal resistance values for single- and multifinger emitter devices are extracted and compared to results obtained from two-dimensional, fully coupled electrothermal simulations. The difference in thermal resistance between the investigated isolation structures becomes more important for transistors with a small aspect ratio, i.e., short emitter length. The influence of thermal boundary conditions, including the substrate thermal resistance, the thermal resistance of the first metallization/via layer, and the simulation structure width is investigated. In, the device with full dielectric isolation-deep polysilicon-filled trenches on an SOI substrate-accurate modeling of the heat flow in the metallization is found to be crucial. Furthermore, the simulated structure must be made wide enough to account for the large heat flow in the lateral direction.

sted, utgiver, år, opplag, sider
IEEE Press, 2005. Vol. 52, nr 7, s. 1423-1428
Emneord [en]
BiCMOS, electrothermal simulation, radio frequency integrated circuit (RFIC), self-heating, silicon-on-insulator (SOI), thermal resistance, bipolar-transistors, thermal-resistance, model
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-14865DOI: 10.1109/ted.2005.850634ISI: 000230123100020Scopus ID: 2-s2.0-23944446689OAI: oai:DiVA.org:kth-14865DiVA, id: diva2:332906
Merknad

QC 20100525

Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

Open Access i DiVA

malmfinalpostprint(1300 kB)454 nedlastinger
Filinformasjon
Fil FULLTEXT01.pdfFilstørrelse 1300 kBChecksum SHA-512
e1aacd530f586de3d1122aaaf9e9ca8886396be2f5d9b23dd6e94642d6a796e84c49f95e7decf817be5b49ba8c7f33a067f7a948e6f84ceaee81cf4387042ec2
Type fulltextMimetype application/pdf

Andre lenker

Forlagets fulltekstScopusFulltext in IEEEXplore

Personposter BETA

Malm, B. Gunnar

Søk i DiVA

Av forfatter/redaktør
Malm, B. GunnarÖstling, Mikael
Av organisasjonen
I samme tidsskrift
IEEE Transactions on Electron Devices

Søk utenfor DiVA

GoogleGoogle Scholar
Totalt: 454 nedlastinger
Antall nedlastinger er summen av alle nedlastinger av alle fulltekster. Det kan for eksempel være tidligere versjoner som er ikke lenger tilgjengelige

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 110 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf