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Modeling and gradient pattern analysis of irregular SFM structures of porous silicon
Vise andre og tillknytning
2006 (engelsk)Inngår i: Microelectronics Journal, ISSN 0026-2692, Vol. 37, nr 4, s. 290-294Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Technological applications in opto-electronic devices have increased the interest in characterizing porous silicon structure patterns. Due to its physical properties, solutions from KPZ 2D are adopted to simulate the structure of porous material interface whose spatial characteristics are equivalent to those found in porous silicon samples. The analysis of the simulated and real scanning Force Microscopy (SFM) surfaces was done using the Gradient Pattern Analysis (GPA). We found that the KPZ 2D model presented asymmetry levels compatible with the irregular surfaces observed by means of SFM images of pi-Si.

sted, utgiver, år, opplag, sider
2006. Vol. 37, nr 4, s. 290-294
Emneord [en]
porous silicon, KPZ equation, gradient pattern analysis, nanostructures, asymmetric fragmentation patterns, dynamics
Identifikatorer
URN: urn:nbn:se:kth:diva-15524DOI: 10.1016/j.mejo.2005.05.029ISI: 000236070300003Scopus ID: 2-s2.0-32544438445OAI: oai:DiVA.org:kth-15524DiVA, id: diva2:333565
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05bibliografisk kontrollert

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