Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Control of self-heating in thin virtual substrate strained Si MOSFETs
Vise andre og tillknytning
2006 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 53, nr 9, s. 2296-2305Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This paper presents the first results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. This paper demonstrates that by using high-quality thin virtual substrates,,the compromised performance enhancements commonly observed in short-gate-length MOSFETs and high-bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated. The devices were fabricated with a 2.8-nm gate oxide and included NiSi to reduce the parasitic series resistance. The strained layers grown on the novel substrates comprising 20% Ge did not relax during fabrication. Good ON-state performance, OFF-state performance, and cross-wafer uniformity are demonstrated. The results show that thin virtual substrates have the potential to circumvent the major issues associated with conventional virtual substrate technology. A promising solution for realizing high-performance strained Si devices suitable for a wide range of applications is thus presented.

sted, utgiver, år, opplag, sider
2006. Vol. 53, nr 9, s. 2296-2305
Emneord [en]
MOSFETs, self-heating, silicon germanium, strained silicon, virtual substrate, field-effect transistors, n-channel mosfets, high ge content, buffer layers, fabrication, silicon, relaxation, mobility, quality, alloys
Identifikatorer
URN: urn:nbn:se:kth:diva-15945DOI: 10.1109/ted.2006.881049ISI: 000240076500039Scopus ID: 2-s2.0-33947097365OAI: oai:DiVA.org:kth-15945DiVA, id: diva2:333987
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Hellström, Per-Erik

Søk i DiVA

Av forfatter/redaktør
Hellström, Per-ErikÖstling, Mikael
Av organisasjonen
I samme tidsskrift
IEEE Transactions on Electron Devices

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 58 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf