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Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Materialfysik, MF.
KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap, Tillämpad materialfysik.
Vise andre og tillknytning
2006 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, nr 7Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the (110) surface of InP, InAs, and InSb. Based on these results we discuss the electronic properties of bulk and surface defects, defect segregation, and compensation. In comparing the relative stability of the surface and bulk defects, it is found that the native defects generally have higher formation energies in the bulk. From this it can be concluded that at equilibrium there is a considerably larger fraction of defects at the surface and under nonequilibrium conditions defects are expected to segregate to the surface, given sufficient time. In most cases the charge state of a defect changes upon segregation, altering the charge-carrier concentrations. The photothresholds are also calculated for the three semiconductors and are found to be in good agreement with experimental data.

sted, utgiver, år, opplag, sider
2006. Vol. 74, nr 7
Emneord [en]
scanning-tunneling-microscopy, electronic-structure, semiconductor surfaces, phosphorus vacancy, low-temperatures, native defects, segregation, pseudopotentials, impurities, inp(110)
Identifikatorer
URN: urn:nbn:se:kth:diva-15966DOI: 10.1103/PhysRevB.74.075332ISI: 000240238800083Scopus ID: 2-s2.0-33748140334OAI: oai:DiVA.org:kth-15966DiVA, id: diva2:334008
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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