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Superiority of p-type spin transistors
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
2006 (engelsk)Inngår i: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T126, s. 21-26Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The spintronic device that has probably stimulated the most research interest is the Datta-Das spin transistor. The mechanism behind it, called the Rashba effect, is that an applied voltage gives rise to a spin splitting. We demonstrate that the relevant spin splitting in k-space can be made more than three orders of magnitude larger for holes than for electrons at the same electric field. This is partly achieved by utilizing the frequently neglected lattice-mismatch between GaAs and AlGaAs. We design heterostructures where this efficient Rashba effect should show up. Compared to present transistors, we conclude that electron-based spin transistors will have problems in becoming competitive but hole-based ones are much more promising.

sted, utgiver, år, opplag, sider
2006. Vol. T126, s. 21-26
Emneord [en]
gaas/algaas quantum-wells, spintronics, injection, system, field
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-16274DOI: 10.1088/0031-8949/2006/T126/005ISI: 000246789700006Scopus ID: 2-s2.0-42349117466OAI: oai:DiVA.org:kth-16274DiVA, id: diva2:334316
Merknad
QC 20100525 QC 20110927. Conference: 21sth Nordic Semiconductor Meeting. Sundvolden, NORWAY. AUG 18-19, 2005 Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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