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Annealing of Al implanted 4H silicon carbide
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2006 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T126, p. 37-40Article in journal (Refereed) Published
Abstract [en]

Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1 x 10(20) cm(-3). These samples were then annealed at temperatures between 1500 and 1950 degrees C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 degrees C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles.

Place, publisher, year, edition, pages
2006. Vol. T126, p. 37-40
Keywords [en]
spreading resistance microscopy, 4h-silicon carbide, aluminum, activation, boron
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-16275DOI: 10.1088/0031-8949/2006/T126/008ISI: 000246789700009Scopus ID: 2-s2.0-42349107305OAI: oai:DiVA.org:kth-16275DiVA, id: diva2:334317
Conference
Conference: 21sth Nordic Semiconductor Meeting. Sundvolden, Norway. AUG 18-19, 2005
Note

QC 20110927

Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.Linnarsson, Margareta K.

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