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1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.ORCID-id: 0000-0001-8108-2631
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
Vise andre og tillknytning
2007 (engelsk)Inngår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 28, nr 11, s. 1007-1009Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high open-base breakdown voltage BVCEO approximate to 1200 V, a low specific ON-resistance R-SP_ON approximate to 5.2 m Omega . cm(2), and a high common-emitter current. gain beta approximate to 60. The high gain of the BJT is attributed to reduced surface recombination that has been obtained using passivation by thermal silicon dioxide grown in nitrous oxide (N2O) ambient. Reference BJTs with passivation by conventional dry thermal oxidation show a clearly lower current gain and a more pronounced emitter-size effect. BJTs with junction termination by a guard-ring-assisted junction-termination extension (JTE) show about 400 V higher breakdown voltage compared with BJTs with a conventional JTE.

sted, utgiver, år, opplag, sider
2007. Vol. 28, nr 11, s. 1007-1009
Emneord [en]
bipolar junction transistors (BJTs), current gain, emitter-size effect, high voltage, surface recombination, 4H-silicon carbide, inversion channel mobility, mosfets
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-17077DOI: 10.1109/led.2007.907418ISI: 000250524200023Scopus ID: 2-s2.0-36148960173OAI: oai:DiVA.org:kth-17077DiVA, id: diva2:335120
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Åpne denne publikasjonen i ny fane eller vindu >>Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
2008 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. For SiC BJTs the common emitter current gain (β), the specific on-resistance (RSP_ON), and the breakdown voltage are important to optimize for competition with silicon based power devices. In this thesis, power SiC BJTs with high current gain β ≈ 60 , low on-resistance RSP_ON ≈ 5 mΩcm2, and high breakdown voltage BVCEO ≈ 1200 V have been demonstrated. The 1200 V SiC BJT that has been demonstrated has about 80 % lower on-state power losses compared to a typical 1200 V Si IGBT chip.

A continuous epitaxial growth of the base-emitter layers has been used to reduce interface defects and thus improve the current gain. A significant influence of surface recombination on the current gain was identified by comparing the experiments with device simulations. In order to reduce the surface recombination, different passivation layers were investigated in SiC BJTs, and thermal oxidation in N2O ambient was identified as an efficient passivation method to increase the current gain.

To obtain a low contact resistance, especially to the p-type base contact, is one critical issue to fabricate SiC power BJTs with low on-resistance. Low temperature anneal (~ 800 oC) of a p-type Ni/Ti/Al contact on 4H-SiC has been demonstrated. The contact resistivity on the ion implanted base region of the BJT was 1.3 × 10-4 Ωcm2 after annealing. The Ni/Ti/Al p-type ohmic contact was adapted to 4H-SiC BJTs fabrication indicating that the base contact plays a role for achieving a low on-resistance of SiC BJTs.

To achieve a high breakdown voltage, optimized junction termination is important in a power device. A guard ring assisted Junction Termination Extension (JTE) structure was used to improve the breakdown voltage of the SiC BJTs. The highest breakdown voltage of the fabricated SiC BJTs was obtained for devices with guard ring assisted JTE using the base contact implant step for a simultaneous formation of guard rings.

As a new approach to fabricate SiC BJTs, epitaxial regrowth of an extrinsic base layer was demonstrated. SiC BJTs without any ion implantation were successfully demonstrated using epitaxial regrowth of a highly doped p-type region and an etched JTE using the epitaxial base. A maximum current gain of 42 was measured for a 1.8 mm × 1.8 mm BJT with a stable and reproducible open base breakdown voltage of 1800 V.

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. xvi, 74
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:01
Emneord
silicon carbide, power device, BJT, current gain, specific on resistance (RSP_ON), breakdown voltage, forward voltage drop, surface recombination, ohmic contact.
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4623 (URN)
Disputas
2008-02-15, Sal E, Forum, Isafjordsgatan 39, Kista, Stockholm, 10:15
Opponent
Veileder
Merknad
QC 20100819Tilgjengelig fra: 2008-01-30 Laget: 2008-01-30 Sist oppdatert: 2010-08-19bibliografisk kontrollert

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