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High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT.ORCID-id: 0000-0001-8108-2631
Vise andre og tillknytning
2008 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 55, nr 8, s. 1894-1898Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This paper describes successful fabrication of 4H-SiC bipolar junction transistors (BJTs) with a regrown extrinsic base layer and an etched junction termination extension (JTE). Large-area 4H-SiC BJTs measuring 1.8 x 1.8 nun (with an active area of 3.24 mm') showed a common emitter current gain 0 of 42, specific on-resistance Rsp ON of 9 mQ - em', and open-base breakdown voltage BVcEO of-1.75 kV at room temperature. The key to successful fabrication of high-current-gain SiC BJTs with a regrown extrinsic base is efficient removal of the p+ regrown layer from the surface of the emitter-base junction. The BJT with p+ regrown layer has the advantage of lower base contact resistivity and current gain that is less sensitive to the distance between the emitter edge and the base contact, compared to a BJT with ion-implanted base. Fabrication of BJTs without ion implantation means less lifetime-reducing defects, and in addition, the surface morphology is improved since high-temperature annealing becomes unnecessary. BJTs with flat-surface junction termination that combine etched regrown layers show about 250 V higher breakdown voltage than BJTs; with only etched flat-surface JTE.

sted, utgiver, år, opplag, sider
2008. Vol. 55, nr 8, s. 1894-1898
Emneord [en]
base regrowth, bipolar junction transistors (BJTs), junction, termination extension (JTE), 4H-silicon carbide, 4h-sic bjts
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-17721DOI: 10.1109/ted.2008.926645ISI: 000257950300018Scopus ID: 2-s2.0-49249108274OAI: oai:DiVA.org:kth-17721DiVA, id: diva2:335766
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Åpne denne publikasjonen i ny fane eller vindu >>Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
2008 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. For SiC BJTs the common emitter current gain (β), the specific on-resistance (RSP_ON), and the breakdown voltage are important to optimize for competition with silicon based power devices. In this thesis, power SiC BJTs with high current gain β ≈ 60 , low on-resistance RSP_ON ≈ 5 mΩcm2, and high breakdown voltage BVCEO ≈ 1200 V have been demonstrated. The 1200 V SiC BJT that has been demonstrated has about 80 % lower on-state power losses compared to a typical 1200 V Si IGBT chip.

A continuous epitaxial growth of the base-emitter layers has been used to reduce interface defects and thus improve the current gain. A significant influence of surface recombination on the current gain was identified by comparing the experiments with device simulations. In order to reduce the surface recombination, different passivation layers were investigated in SiC BJTs, and thermal oxidation in N2O ambient was identified as an efficient passivation method to increase the current gain.

To obtain a low contact resistance, especially to the p-type base contact, is one critical issue to fabricate SiC power BJTs with low on-resistance. Low temperature anneal (~ 800 oC) of a p-type Ni/Ti/Al contact on 4H-SiC has been demonstrated. The contact resistivity on the ion implanted base region of the BJT was 1.3 × 10-4 Ωcm2 after annealing. The Ni/Ti/Al p-type ohmic contact was adapted to 4H-SiC BJTs fabrication indicating that the base contact plays a role for achieving a low on-resistance of SiC BJTs.

To achieve a high breakdown voltage, optimized junction termination is important in a power device. A guard ring assisted Junction Termination Extension (JTE) structure was used to improve the breakdown voltage of the SiC BJTs. The highest breakdown voltage of the fabricated SiC BJTs was obtained for devices with guard ring assisted JTE using the base contact implant step for a simultaneous formation of guard rings.

As a new approach to fabricate SiC BJTs, epitaxial regrowth of an extrinsic base layer was demonstrated. SiC BJTs without any ion implantation were successfully demonstrated using epitaxial regrowth of a highly doped p-type region and an etched JTE using the epitaxial base. A maximum current gain of 42 was measured for a 1.8 mm × 1.8 mm BJT with a stable and reproducible open base breakdown voltage of 1800 V.

sted, utgiver, år, opplag, sider
Stockholm: KTH, 2008. s. xvi, 74
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2008:01
Emneord
silicon carbide, power device, BJT, current gain, specific on resistance (RSP_ON), breakdown voltage, forward voltage drop, surface recombination, ohmic contact.
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-4623 (URN)
Disputas
2008-02-15, Sal E, Forum, Isafjordsgatan 39, Kista, Stockholm, 10:15
Opponent
Veileder
Merknad
QC 20100819Tilgjengelig fra: 2008-01-30 Laget: 2008-01-30 Sist oppdatert: 2010-08-19bibliografisk kontrollert
2. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors
Åpne denne publikasjonen i ny fane eller vindu >>Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors
2011 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. However, to compete with other switching devices such as Field Effect Transistors (FETs) or IGBTs, it is necessary for a power SiC BJT to provide a high current gain to reduce the power required from the drive circuit. In this thesis implantation free 4H-SiC BJTs with linearly graded base layer have been demonstrated with common-emitter current gain of 50 and open-base breakdown voltage of 2700 V. Also an efficient junction termination extension (JTE) with 80% of theoretical parallel-plane breakdown voltage was analyzed by fabrication of high voltage PiN diodes to achieve an optimum dose of remaining JTE charge. Surface passivation of 4H-SiC BJT is an essential factor for efficient power BJTs. Therefore different passivation techniques were compared and showed that around 60% higher maximum current gain can be achieved by a newsurface passivation layer with low interface trap density that consists of PECVD oxide followed by post-deposition oxide anneal in N2O ambient. This surface passivation along with doublezone JTE were used for fabrication of high power BJTs that result in successful demonstration of 2800 V breakdown voltage for small area (0.3 × 0.3 mm) and large area (1.8 × 1.8 mm) BJTs with a maximum dc current gain of 55 and 52, respectively. The small area BJT showed RON = 4mΩcm2, while for the large are BJT RON = 6.8 mΩcm2. Finally, a Darlington transistor with a maximum current gain of 2900 at room temperature and 640 at 200 °C is reported. The high current gain of the Darlington transistor is achieved by optimum design for the ratio of the active area of the driver BJT to the output BJT.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2011. s. xv, 79
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:01
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-29726 (URN)978-91-7415-861-8 (ISBN)
Disputas
2011-03-04, Sal C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:00 (engelsk)
Opponent
Veileder
Merknad
QC 20110216Tilgjengelig fra: 2011-02-16 Laget: 2011-02-14 Sist oppdatert: 2011-02-16bibliografisk kontrollert

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