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The nn(+)-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes
Vise andre og tillknytning
2009 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 56, nr 11, s. 2825-2832Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The effects during reverse recovery of pin power diodes are determined by free carriers and their interaction with the electric field. A density of free carriers higher than the background doping will easily occur in space-charge regions during reverse recovery of high-voltage silicon devices. As a result, a high electric-field strength combined with avalanche generation occurs at the p-n junction. However, if a second region with high electric-field strength arises at the nn(+)-junction, the situation can become critical. If the second electric-field peak can be suppressed, it is possible to make diodes that are very rugged and show a significantly improved soft-recovery behavior.

sted, utgiver, år, opplag, sider
2009. Vol. 56, nr 11, s. 2825-2832
Emneord [en]
Avalanche, dynamic avalanche, power diodes, reverse recovery, high-voltage diodes, dynamic avalanche, buffer structures, reverse-recovery, breakdown, injection
Identifikatorer
URN: urn:nbn:se:kth:diva-18883DOI: 10.1109/ted.2009.2031019ISI: 000271019500058Scopus ID: 2-s2.0-70350712125OAI: oai:DiVA.org:kth-18883DiVA, id: diva2:336930
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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