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Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6459-749X
Vise andre og tillknytning
2010 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 57, nr 3, s. 704-711Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Accurate physical modeling has been developed to describe the current gain of silicon carbide (SiC) power bipolar junction transistors (BJTs), and the results have been compared with measurements. Interface traps between SiC and SiO2 have been used to model the surface recombination by changing the trap profile, capture cross section, and concentration. The best agreement with measurement is obtained using one single energy level at 1 eV above the valence band, a capture cross section of 1 x 10(-15) cm(2), and a trap concentration of 2 x 10(12) cm(-2). Simulations have been performed at different temperatures to validate the model and characterize the temperature behavior of SiC BJTs. An analysis of the carrier concentration at different collector currents has been performed in order to describe the mechanisms of the current gain fall-off at a high collector current both at room temperature and high temperatures. At room temperature, high injection in the base ( which has a doping concentration of 3 x 10(17) cm(-3)) and forward biasing of the base-collector junction occur simultaneously, causing an abrupt drop of the current gain. At higher temperatures, high injection in the base is alleviated by the higher ionization degree of the aluminum dopants, and then forward biasing of the base-collector junction is the acting mechanism for the current gain fall-off. Forward biasing of the base-collector junction can also explain the reduction of the knee current with increasing temperature by means of the negative temperature dependence of the mobility.

sted, utgiver, år, opplag, sider
2010. Vol. 57, nr 3, s. 704-711
Emneord [en]
Bipolar junction transistor (BJT), current gain, interface traps, silicon carbide (SiC), simulations, temperature modeling, 1800 v, interface, oxide, 4h
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-19258DOI: 10.1109/ted.2009.2039099ISI: 000274993100022Scopus ID: 2-s2.0-77649179200OAI: oai:DiVA.org:kth-19258DiVA, id: diva2:337305
Merknad
QC 20100525Tilgjengelig fra: 2010-08-05 Laget: 2010-08-05 Sist oppdatert: 2017-12-12bibliografisk kontrollert
Inngår i avhandling
1. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Åpne denne publikasjonen i ny fane eller vindu >>Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
2012 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. However, in order to compete on the market, it is crucial to a have high current gain and a breakdown voltage close to ideal. Moreover, the absence of conductivity modulation and long-term stability has to be solved.

In this thesis, these topics are investigated comparing simulations and measurements. Initially, an efficient etched JTE has been simulated and fabricated. In agreement with the simulations, the fabricated diodes exhibit the highest BV of around 4.3 kV when a two-zone JTE is implemented. Furthermore, the simulations and measurements demonstrate a good agreement between the electric field distribution inside the device and the optical luminescence measured at breakdown.

Additionally, an accurate model to simulate the forward characteristics of 4H-SiC BJTs is presented. In order to validate the model, the simulated current gains are compared with measurements at different temperatures and different base-emitter geometries. Moreover, the simulations and measurements of the on-resistance are compared at different base currents and different temperatures. This comparison, coupled with a detailed analysis of the carrier concentration inside the BJT, indicates that internal forward biasing of the base-collector junction limits the BJT to operate at high current density and low forward voltage drop simultaneously. In agreement with the measurements, a design with a highly-doped extrinsic base is proposed to alleviate this problem.

In addition to the static characteristics, the comparison of measured and simulated switching waveforms demonstrates that the SiC BJT can provide fast switching speed when it acts as a unipolar device. This is crucial to have low power losses during transient.

Finally, the long-term stability is investigated. It is observed that the electrical stress of the base-emitter diode produces current gain degradation; however, the degradation mechanisms are still unclear. In fact, the analysis of the measured Gummel plot suggests that the reduction of the carrier lifetime in the base-emitter region might be only one of the causes of this degradation. In addition, the current gain degradation due to ionizing radiation is investigated comparing the simulations and measurements. The simulations suggest that the creation of positive charge in the passivation layer can increase the base current; this increase is also observed in the electrical measurements.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2012. s. xiv, 82
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2012:08
Emneord
silicon carbide, power device, BJT, diode, simulation, characterization, current gain, on-resistance, breakdown voltage, forward voltage drop, degradation
HSV kategori
Forskningsprogram
SRA - Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-95320 (URN)978-91-7501-365-7 (ISBN)
Disputas
2012-06-08, C1, Electrum, KTH-ICT, Isafjordsgatan 26, Kista, 10:00 (engelsk)
Opponent
Veileder
Merknad
QC 20120522Tilgjengelig fra: 2012-05-22 Laget: 2012-05-22 Sist oppdatert: 2012-05-22bibliografisk kontrollert

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