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The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs
KTH, Tidigare Institutioner                               , Mikroelektronik och informationsteknik, IMIT.
Vise andre og tillknytning
2001 (engelsk)Inngår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 45, nr 5, s. 645-653Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations.

sted, utgiver, år, opplag, sider
2001. Vol. 45, nr 5, s. 645-653
Emneord [en]
SiC, vertical MESFETs, device simulations, hexagonal sic polytypes
Identifikatorer
URN: urn:nbn:se:kth:diva-20724ISI: 000169397100004OAI: oai:DiVA.org:kth-20724DiVA, id: diva2:339420
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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Persson, Clas

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