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Sub-f(t) gain resonance of InP/InGaAs-HBTs
KTH, Tidigare Institutioner                               , Mikroelektronik och informationsteknik, IMIT.
2002 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 49, nr 2, s. 213-220Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Advanced npn-InP/InGaAs HBTs are often operated at high current levels for optimum high-speed performance. Because of velocity modulation effects, these transistors may operate in base-pushout although measurements of the cut-off frequency f(t) indicate the opposite. We show that the low mobility of the holes has a strong effect on the transistor operation in this regime, which is only revealed from a dynamic analysis: The unilateral power gain peaks far below f(t) followed by a -40 dB/dec roll-off. The effect was thoroughly analyzed and as a result, we present a simple equivalent circuit model that successfully describes transistors operating in pushout up to very high frequencies.

sted, utgiver, år, opplag, sider
2002. Vol. 49, nr 2, s. 213-220
Emneord [en]
base-pushout, high-frequency limitations, hole velocity, InP-HBT, Kirk-effect, unilateral power gain, bipolar-transistors, currents
Identifikatorer
URN: urn:nbn:se:kth:diva-21290ISI: 000173613700001OAI: oai:DiVA.org:kth-21290DiVA, id: diva2:339988
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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