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Critical concentration for the doping-induced metal-nonmetal transition in cubic and hexagonal GaN
2002 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, nr 5, s. 2550-2555Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The critical concentration for the metal-nonmetal transition has been calculated for n-type and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three different computational methods have been utilized: the first is the original Mott model, the second is an extended Mott-Hubbard model, and the third method is based on total energy of the metallic and the nonmetallic phases. All three methods show a similar value of the critical concentration, about 10(18) and 10(20) cm(-3) for n-type and p-type doped materials, respectively.

sted, utgiver, år, opplag, sider
2002. Vol. 92, nr 5, s. 2550-2555
Emneord [en]
acceptor binding-energies, optical-properties, shallow donors, n-type, doped semiconductors, dynamical properties, dielectric function, wurtzite gan, aln, si
Identifikatorer
URN: urn:nbn:se:kth:diva-21838ISI: 000177548500053OAI: oai:DiVA.org:kth-21838DiVA, id: diva2:340536
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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