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Observed critical thickness in selectively and non-selectively grown Si1-xGex layers on patterned substrates
KTH, Tidigare Institutioner                               , Mikroelektronik och informationsteknik, IMIT.
2002 (engelsk)Inngår i: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T101, s. 42-44Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Relaxation of SiGe layers grown selectively or non-selectively on oxide-patterned substrates using reduced pressure chemical vapor deposition was investigated. The influences of the buffer layer, the polycrystalline layer on the oxide and the opening size on the critical thickness for relaxation of SiGe layers have been studied in detail. High resolution reciprocal lattice mapping, atomic force microscopy and Normanski optical microscope have been used as the main characterization tools.

sted, utgiver, år, opplag, sider
2002. Vol. T101, s. 42-44
Emneord [en]
molecular-beam-epitaxy, misfit dislocations, nonplanar surfaces, si, heterostructures
Identifikatorer
URN: urn:nbn:se:kth:diva-22074ISI: 000179465600011OAI: oai:DiVA.org:kth-22074DiVA, id: diva2:340772
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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